发明申请
- 专利标题: REACTOR FOR PRODUCING POLYCRYSTALLINE SILICON, SYSTEM FOR PRODUCING POLYCRYSTALLINE SILICON, AND PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON
- 专利标题(中): 用于制造多晶硅的反应器,用于生产多晶硅的系统和用于生产多晶硅的方法
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申请号: US13496002申请日: 2010-07-09
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公开(公告)号: US20120237429A1公开(公告)日: 2012-09-20
- 发明人: Shigeyoshi Netsu , Kyoji Oguro , Takaaki Shimizu , Yasushi Kurosawa , Fumitaka Kume
- 申请人: Shigeyoshi Netsu , Kyoji Oguro , Takaaki Shimizu , Yasushi Kurosawa , Fumitaka Kume
- 申请人地址: JP Tokyo
- 专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2009-211804 20090914
- 国际申请: PCT/JP10/04478 WO 20100709
- 主分类号: B01J19/00
- IPC分类号: B01J19/00 ; C01B33/027
摘要:
An inner wall 11 of a reactor 10 has a two-layer structure: an anticorrosive layer 11a comprising an alloy material having high anticorrosiveness is provided on the inner side of the reactor contacting a corrosive process gas, and a heat conductive layer 11b for efficiently conducting the heat within the reactor 10 from an inner wall surface to a coolant flow passage 13 is provided on the outer side of the reactor (outer-wall side). The anticorrosive layer 11a comprises an alloy material having a composition for which a value R, defined by R=[Cr]+[Ni]−1.5 [Si], is not less than 40% wherein [Cr] is a mass content (% by mass) of chromium (Cr), [Ni] is a mass content (% by mass) of nickel (Ni), and [Si] is a mass content (% by mass) of silicon (Si).
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