-
1.发明授权Reactor for producing polycrystalline silicon, system for producing polycrystalline silicon, and process for producing polycrystalline silicon 有权用于生产多晶硅的反应器，用于生产多晶硅的系统以及用于生产多晶硅的工艺公开(公告)号：US09193596B2
公开(公告)日：2015-11-24
申请号：US13496002
申请日：2010-07-09
IPC分类号： C01B33/02 , B01J19/00 , C01B33/035 , C22C1/02
CPC分类号： C01B33/035 , C22C1/02 , Y02P20/124
摘要： An inner wall 11 of a reactor 10 has a two-layer structure: an anticorrosive layer 11a comprising an alloy material having high anticorrosiveness is provided on the inner side of the reactor contacting a corrosive process gas, and a heat conductive layer 11b for efficiently conducting the heat within the reactor 10 from an inner wall surface to a coolant flow passage 13 is provided on the outer side of the reactor (outer-wall side). The anticorrosive layer 11a comprises an alloy material having a composition for which a value R, defined by R=[Cr]+[Ni]−1.5 [Si], is not less than 40% wherein [Cr] is a mass content (% by mass) of chromium (Cr), [Ni] is a mass content (% by mass) of nickel (Ni), and [Si] is a mass content (% by mass) of silicon (Si).
摘要翻译： 反应器10的内壁11具有两层结构：在与腐蚀性工艺气体接触的反应器的内侧设置有包括具有高防锈性的合金材料的防腐蚀层11a和用于有效导电的导热层11b 在反应器10的外侧（外壁侧）设置有从内壁面到冷却剂流路13的反应器10内的热量。 防腐层11a包括具有由R = [Cr] + [Ni] -1.5 [Si]定义的值R为40％以上的组成的合金材料，其中[Cr]为质量含量（％ （Cr），[Ni]为镍（Ni）的质量含量（质量％），[Si]为硅（Si）的质量含量（质量％）。
-
2.发明授权公开(公告)号：US09017482B2
公开(公告)日：2015-04-28
申请号：US13496060
申请日：2010-07-20
CPC分类号： H01L21/02595 , B01J19/02 , B01J2219/0236 , C01B33/035 , C23C16/24 , C23C16/4411 , C23C16/463 , C23C16/52 , H01L21/02532 , H01L21/02636 , Y02P20/124 , Y02P20/129
摘要： The present invention provides a technique by which heat can be efficiently recovered from a coolant used to cool a reactor, and contamination with dopant impurities from an inner wall of a reactor when polycrystalline silicon is deposited within the reactor can be reduced to produce high-purity polycrystalline silicon. With the use of hot water 15 having a temperature higher than a standard boiling point as a coolant fed to the reactor 10, the temperature of the reactor inner wall is kept at a temperature of not more than 370° C. Additionally, the pressure of the hot water 15 to be recovered is reduced by a pressure control section provided in a coolant tank 20 to generate steam. Thereby, a part of the hot water is taken out as steam to the outside, and reused as a heating source for another application.
摘要翻译： 本发明提供了一种技术，通过该技术可以降低用于冷却反应器的冷却剂的热量，并且可以减少在反应器内沉积多晶硅时来自反应器的内壁的掺杂剂杂质的污染，以产生高纯度 多晶硅。 通过使用温度高于标准沸点的热水15作为供给到反应器10的冷却剂，反应器内壁的温度保持在不高于370℃的温度。另外， 通过设置在冷却剂罐20中的压力控制部来减少要回收的热水15，以产生蒸汽。 因此，一部分热水作为蒸汽被取出到外部，并且再次用作另一种应用的加热源。
-
3.发明申请REACTOR FOR PRODUCING POLYCRYSTALLINE SILICON, SYSTEM FOR PRODUCING POLYCRYSTALLINE SILICON, AND PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON 有权用于制造多晶硅的反应器，用于生产多晶硅的系统和用于生产多晶硅的方法公开(公告)号：US20120237429A1
公开(公告)日：2012-09-20
申请号：US13496002
申请日：2010-07-09
IPC分类号： B01J19/00 , C01B33/027
CPC分类号： C01B33/035 , C22C1/02 , Y02P20/124
摘要： An inner wall 11 of a reactor 10 has a two-layer structure: an anticorrosive layer 11a comprising an alloy material having high anticorrosiveness is provided on the inner side of the reactor contacting a corrosive process gas, and a heat conductive layer 11b for efficiently conducting the heat within the reactor 10 from an inner wall surface to a coolant flow passage 13 is provided on the outer side of the reactor (outer-wall side). The anticorrosive layer 11a comprises an alloy material having a composition for which a value R, defined by R=[Cr]+[Ni]−1.5 [Si], is not less than 40% wherein [Cr] is a mass content (% by mass) of chromium (Cr), [Ni] is a mass content (% by mass) of nickel (Ni), and [Si] is a mass content (% by mass) of silicon (Si).
摘要翻译： 反应器10的内壁11具有两层结构：在与腐蚀性工艺气体接触的反应器的内侧设置有包括具有高防锈性的合金材料的防腐蚀层11a和用于有效导电的导热层11b 在反应器10的外侧（外壁侧）设置有从内壁面到冷却剂流路13的反应器10内的热量。 防腐层11a包括具有由R = [Cr] + [Ni] -1.5 [Si]定义的值R为40％以上的组成的合金材料，其中[Cr]为质量含量（％ （Cr），[Ni]为镍（Ni）的质量含量（质量％），[Si]为硅（Si）的质量含量（质量％）。
-
4.发明申请SYSTEM FOR PRODUCING POLYCRYSTALLINE SILICON, APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON, AND PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON 有权用于生产多晶硅的系统，用于生产多晶硅的装置和用于生产多晶硅的方法公开(公告)号：US20120207662A1
公开(公告)日：2012-08-16
申请号：US13496060
申请日：2010-07-20
IPC分类号： C01B33/027 , B01J19/00
CPC分类号： H01L21/02595 , B01J19/02 , B01J2219/0236 , C01B33/035 , C23C16/24 , C23C16/4411 , C23C16/463 , C23C16/52 , H01L21/02532 , H01L21/02636 , Y02P20/124 , Y02P20/129
摘要： The present invention provides a technique by which heat can be efficiently recovered from a coolant used to cool a reactor, and contamination with dopant impurities from an inner wall of a reactor when polycrystalline silicon is deposited within the reactor can be reduced to produce high-purity polycrystalline silicon. With the use of hot water 15 having a temperature higher than a standard boiling point as a coolant fed to the reactor 10, the temperature of the reactor inner wall is kept at a temperature of not more than 370° C. Additionally, the pressure of the hot water 15 to be recovered is reduced by a pressure control section provided in a coolant tank 20 to generate steam. Thereby, a part of the hot water is taken out as steam to the outside, and reused as a heating source for another application.
摘要翻译： 本发明提供了一种技术，通过该技术可以降低用于冷却反应器的冷却剂的热量，并且可以减少在反应器内沉积多晶硅时来自反应器的内壁的掺杂剂杂质的污染，以产生高纯度 多晶硅。 通过使用温度高于标准沸点的热水15作为供给到反应器10的冷却剂，反应器内壁的温度保持在不高于370℃的温度。另外， 通过设置在冷却剂罐20中的压力控制部来减少要回收的热水15，以产生蒸汽。 因此，一部分热水作为蒸汽被取出到外部，并且再次用作另一种应用的加热源。
-
5.发明授权公开(公告)号：US08793853B2
公开(公告)日：2014-08-05
申请号：US13502015
申请日：2010-07-27
IPC分类号： B25B1/00
CPC分类号： C01B33/035 , Y10T29/53796 , Y10T29/53961
摘要： One end side of a core wire holder 20 is formed into a shape of a truncated cone and has an inclined surface. In the end portion, an opening 22 is provided, and a hollow portion 21 is formed, a silicon core wire 5 being inserted into the hollow portion 21 and held therein. On the surface of the silicon core wire 5, polycrystalline silicon 6 is vapor deposited by the Siemens method to produce a polycrystalline silicon rod. On the inclined surface of the truncated cone portion in the vicinity of the opening 22, as a thermal insulating layer, annular slits 23a to 23c are formed from an outer circumferential surface in the vicinity of the opening toward the hollow portion 21. The annular slit acts as a thermal insulating portion, and suppresses escape of the heat to heat the one end side of the core wire holder 20.
摘要翻译： 芯线保持架20的一端形成为截头圆锥形，具有倾斜面。 在端部设有开口部22，形成中空部21，插入中空部21并保持在其中的硅芯线5。 在硅芯线5的表面上，通过西门子方法气相沉积多晶硅6以制造多晶硅棒。 在开口部22附近的截锥体的倾斜面上，作为绝热层，从开口部的朝向中空部21的外周面形成环状狭缝23a〜23c。环状狭缝 用作绝热部分，并且抑制热量逸出以加热芯线保持器20的一端侧。
-
6.发明申请公开(公告)号：US20120222619A1
公开(公告)日：2012-09-06
申请号：US13508826
申请日：2010-10-22
IPC分类号： C23C16/50
CPC分类号： C23C16/458 , C01B32/225 , C01B33/035 , C23C16/24
摘要： The upper electrode 31 has a hole 35 extending from an upper surface 33 to a lower surface 34, a bolt 36 is inserted from the upper surface 33 of the upper electrode 31 into the hole 35, and secured in a lower electrode 32 by a screw. A gap 51 between an inside of the hole 35 and a straight body portion of the bolt 36 allows the upper electrode 31 to slide in all directions in a placement surface (upper surface of the lower electrode 32 in contact with the lower surface 34 of the upper electrode 31 in FIG. 2) that is a contact surface with an upper surface of the lower electrode 32, thereby providing an effect of preventing occurrence of a crack or a break in a U rod that can be expanded and contracted in all directions during a vapor phase growth process.
摘要翻译： 上电极31具有从上表面33延伸到下表面34的孔35，将螺栓36从上电极31的上表面33插入孔35中，并通过螺钉固定在下电极32中 。 孔35的内部和螺栓36的直体部之间的间隙51允许上电极31在放置表面（在下电极32的下表面34的上表面）的所有方向上滑动 作为与下部电极32的上表面的接触面的图2中的上部电极31），由此提供防止U棒的发生龟裂或断裂的效果，U棒能够在各个方向上膨胀和收缩 气相生长过程。
-
7.发明授权Carbon electrode with slidable contact surfaces and apparatus for manufacturing polycrystalline silicon rod 有权具有可滑动接触表面的碳电极和用于制造多晶硅棒的设备公开(公告)号：US09562289B2
公开(公告)日：2017-02-07
申请号：US13508826
申请日：2010-10-22
IPC分类号： C30B28/12 , C23C16/458 , C01B33/035 , C23C16/24 , C01B31/04
CPC分类号： C23C16/458 , C01B32/225 , C01B33/035 , C23C16/24
摘要： The upper electrode 31 has a hole 35 extending from an upper surface 33 to a lower surface 34, a bolt 36 is inserted from the upper surface 33 of the upper electrode 31 into the hole 35, and secured in a lower electrode 32 by a screw. A gap 51 between an inside of the hole 35 and a straight body portion of the bolt 36 allows the upper electrode 31 to slide in all directions in a placement surface (upper surface of the lower electrode 32 in contact with the lower surface 34 of the upper electrode 31 in FIG. 2) that is a contact surface with an upper surface of the lower electrode 32, thereby providing an effect of preventing occurrence of a crack or a break in a U rod that can be expanded and contracted in all directions during a vapor phase growth process.
摘要翻译： 上电极31具有从上表面33延伸到下表面34的孔35，将螺栓36从上电极31的上表面33插入孔35中，并通过螺钉固定在下电极32中 。 孔35的内部和螺栓36的直体部之间的间隙51允许上电极31在放置表面（在下电极32的下表面34的上表面）的所有方向上滑动 作为与下部电极32的上表面的接触面的图2中的上部电极31），由此提供防止U棒的发生龟裂或断裂的效果，U棒能够在各个方向上膨胀和收缩 气相生长过程。
-
8.发明申请公开(公告)号：US20120201976A1
公开(公告)日：2012-08-09
申请号：US13502015
申请日：2010-07-27
CPC分类号： C01B33/035 , Y10T29/53796 , Y10T29/53961
摘要： One end side of a core wire holder 20 is formed into a shape of a truncated cone and has an inclined surface. In the end portion, an opening 22 is provided, and a hollow portion 21 is formed, a silicon core wire 5 being inserted into the hollow portion 21 and held therein. On the surface of the silicon core wire 5, polycrystalline silicon 6 is vapor deposited by the Siemens method to produce a polycrystalline silicon rod. On the inclined surface of the truncated cone portion in the vicinity of the opening 22, as a thermal insulating layer, annular slits 23a to 23c are formed from an outer circumferential surface in the vicinity of the opening toward the hollow portion 21. The annular slit acts as a thermal insulating portion, and suppresses escape of the heat to heat the one end side of the core wire holder 20.
摘要翻译： 芯线保持架20的一端形成为截头圆锥形，具有倾斜面。 在端部设有开口部22，形成中空部21，插入中空部21并保持在其中的硅芯线5。 在硅芯线5的表面上，通过西门子方法气相沉积多晶硅6以制造多晶硅棒。 在开口部22附近的截锥体的倾斜面上，作为绝热层，从开口部的朝向中空部21的外周面形成环状狭缝23a〜23c。环状狭缝 用作绝热部分，并且抑制热量逸出以加热芯线保持器20的一端侧。
-
公开(公告)号：US20130089489A1
公开(公告)日：2013-04-11
申请号：US13704767
申请日：2011-03-07
IPC分类号： B08B3/10 , F26B5/12 , C01B33/035
CPC分类号： F26B5/042 , B08B3/04 , B08B3/10 , C01B33/035 , C23C16/4407 , F26B5/12 , F28G13/00
摘要： A bell jar includes a metallic bell jar (1), and a metallic base plate (2) on which the bell jar (1) is placed, and packing (3) seals an inside of a container. To the base plate (2), a pressure gauge (4), a gas introduction line (5), and a gas discharge line (6) are connected so as to allow monitoring of internal pressure of the bell jar (1) and introduction and discharge of a gas. A vacuum pump (7) is provided in a path of the gas discharge line (6), and the vacuum pump (7) reduces internal pressure of the bell jar so as to be lower than vapor pressure of water. The vacuum pump (7) reduces the internal pressure of the bell jar so as to be lower than vapor pressure of water, thereby efficiently removing moisture, and completing drying of the bell jar in a short time.
-
10.发明授权Method for cleaning bell jar, method for producing polycrystalline silicon, and apparatus for drying bell jar 有权钟罩的清洗方法，多晶硅的制造方法以及钟罩的干燥装置公开(公告)号：US09126242B2
公开(公告)日：2015-09-08
申请号：US13704767
申请日：2011-03-07
CPC分类号： F26B5/042 , B08B3/04 , B08B3/10 , C01B33/035 , C23C16/4407 , F26B5/12 , F28G13/00
摘要： A bell jar includes a metallic bell jar (1), and a metallic base plate (2) on which the bell jar (1) is placed, and packing (3) seals an inside of a container. To the base plate (2), a pressure gauge (4), a gas introduction line (5), and a gas discharge line (6) are connected so as to allow monitoring of internal pressure of the bell jar (1) and introduction and discharge of a gas. A vacuum pump (7) is provided in a path of the gas discharge line (6), and the vacuum pump (7) reduces internal pressure of the bell jar so as to be lower than vapor pressure of water. The vacuum pump (7) reduces the internal pressure of the bell jar so as to be lower than vapor pressure of water, thereby efficiently removing moisture, and completing drying of the bell jar in a short time.
摘要翻译： 钟形瓶包括金属钟形瓶（1）和金属底板（2），其上放置钟形罩（1），并且包装（3）密封容器的内部。 连接到基板（2）上的压力计（4），气体引入管线（5）和气体排出管线（6），以便监测钟罩（1）的内部压力和引入 并排出气体。 真空泵（7）设置在气体排出管路（6）的路径中，真空泵（7）将钟罩的内部压力降低到低于水的蒸汽压力。 真空泵（7）将钟罩的内部压力降低到低于水的蒸汽压力，从而有效地去除水分，并在短时间内完成钟罩的干燥。
-
-
-
-
-
-
-
-
-
搜索结果
32 条记录 (耗时 0.023 秒)
