发明申请
- 专利标题: ELECTRON BEAM DATA STORAGE SYSTEM AND METHOD FOR HIGH VOLUME MANUFACTURING
- 专利标题(中): 电子束数据存储系统和高容量制造方法
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申请号: US13049123申请日: 2011-03-16
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公开(公告)号: US20120237877A1公开(公告)日: 2012-09-20
- 发明人: Hung-Chun Wang , Pei-Shiang Chen , Tzu-Chin Lin , Faruk Krecinic , Jeng-Horng Chen , Wen-Chun Huang , Ru-Gun Liu
- 申请人: Hung-Chun Wang , Pei-Shiang Chen , Tzu-Chin Lin , Faruk Krecinic , Jeng-Horng Chen , Wen-Chun Huang , Ru-Gun Liu
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: G03F7/20
- IPC分类号: G03F7/20 ; G06F17/50
摘要:
The present disclosure provides for many different embodiments of a charged particle beam data storage system and method. In an example, a method includes dividing a design layout into a plurality of units; creating a lookup table that maps each of the plurality of units to its position within the design layout and a data set, wherein the lookup table associates any repeating units in the plurality of units to a same data set; and exposing an energy sensitive layer to a charged particle beam based on the lookup table.
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