中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

9 records (took 0.012 seconds)

    Striping methodology for maskless lithography
    2.
    发明授权
    Striping methodology for maskless lithography 有权
    无掩模光刻的剥离方法

    公开(公告)号：US08473877B2

    公开(公告)日：2013-06-25

    申请号：US13225617

    申请日：2011-09-06

    Applicant: Hung-Chun Wang ,  Tzu-Chin Lin ,  Nian-Fuh Cheng ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

    Inventor： Hung-Chun Wang ,  Tzu-Chin Lin ,  Nian-Fuh Cheng ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

    IPC: G06F17/50

    CPC classification number: G03F7/70425 ,  H01J37/3174

    Abstract: The present disclosure involves a method of performing a maskless lithography process. The method includes receiving a computer layout file for an integrated circuit (IC) device. The layout file contains a plurality of IC sections. The method includes separating the computer layout file into a plurality of sub-files. The method includes striping the plurality of sub-files concurrently using a plurality of computer processors, thereby generating a plurality of striped sub-files. The method includes transferring the plurality of striped sub-files to a maskless lithography system.

    Abstract translation: 本公开涉及执行无掩模光刻工艺的方法。 该方法包括接收用于集成电路（IC）设备的计算机布局文件。 布局文件包含多个IC部分。 该方法包括将计算机布局文件分离成多个子文件。 该方法包括使用多个计算机处理器并行地分割多个子文件，从而生成多个条带化子文件。 该方法包括将多个条带化子文件传送到无掩模光刻系统。

    Relief engraved doorplate
    4.
    发明授权
    Relief engraved doorplate 失效

    公开(公告)号：US06588163B2

    公开(公告)日：2003-07-08

    申请号：US09906046

    申请日：2001-07-17

    Applicant: Martin Wang ,  Chi-Sui Wang ,  Jui-Shih Lin ,  Tzu Chin Lin

    Inventor： Martin Wang ,  Chi-Sui Wang ,  Jui-Shih Lin ,  Tzu Chin Lin

    IPC: E04C210

    CPC classification number: B32B21/06 ,  B32B21/02 ,  B32B21/04 ,  B32B27/08 ,  B32B27/10 ,  B32B2607/00 ,  B44C5/0453 ,  E06B3/7001 ,  E06B2003/7051 ,  Y10T428/24529 ,  Y10T428/24554 ,  Y10T428/24603 ,  Y10T428/24612 ,  Y10T428/253

    Abstract: A type of relief engraved doorplate, comprising an inside plate that is composed of a first Bakelite layer and a second Bakelite layer, said first Bakelite layer and second Bakelite layer being composed of coarse wood dust and fine wood powder respectively, the second Bakelite layer enveloping the exterior of the first Bakelite layer before they are subjected to heated compression molding to obtain the relief engraved pattern on the top and bottom panels of the inside plate; and, at least one pair of outside decorative plates, including at least a layer of thin wood plate and a layer of water-resistant paper, the water-resistant paper being glued onto the thin wood plate and put in a compression mold with a pattern that is opposite to that of the inside plate, to obtain a depressed pattern on one side of the outside decorative plate, which is opposite to the relief engraved pattern on the inside plate, and then it is fitted to the top and bottom panels of the inside plate and subjected to compression molding process to obtain a relief engraved doorplate that has a tightly knit structure and tenacity to resist water and fire.

    Geometric pattern data quality verification for maskless lithography
    5.
    发明授权
    Geometric pattern data quality verification for maskless lithography 有权
    无掩模光刻的几何图形数据质量验证

    公开(公告)号：US08601407B2

    公开(公告)日：2013-12-03

    申请号：US13217345

    申请日：2011-08-25

    Applicant: Hung-Chun Wang ,  Pei-Shiang Chen ,  Tzu-Chin Lin ,  Cheng-Hung Chen ,  Shih-Chi Wang ,  Nian-Fuh Cheng ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

    Inventor： Hung-Chun Wang ,  Pei-Shiang Chen ,  Tzu-Chin Lin ,  Cheng-Hung Chen ,  Shih-Chi Wang ,  Nian-Fuh Cheng ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

    IPC: G06F17/50

    CPC classification number: G03F7/2059

    Abstract: Provided is a method of performing a maskless lithography process. The method includes providing a proximity correction pattern. The method includes generating a deformed pattern based on the proximity correction pattern. The method includes performing a first convolution process to the proximity correction pattern to generate a first proximity correction pattern contour. The method includes processing the first proximity correction pattern contour to generate a second proximity correction pattern contour. The method includes performing a second convolution process to the deformed pattern to generate a first deformed pattern contour. The method includes processing the first deformed pattern contour to generate a second deformed pattern contour. The method includes identifying mismatches between the second proximity correction pattern contour and the second deformed pattern contour. The method includes determining whether the deformed pattern is lithography-ready in response to the identifying.

    Abstract translation: 提供了进行无掩模光刻处理的方法。 该方法包括提供接近校正模式。 该方法包括基于接近校正图案生成变形图案。 该方法包括对接近校正图案执行第一卷积处理以产生第一邻近校正图案轮廓。 该方法包括处理第一接近校正图案轮廓以产生第二邻近校正图案轮廓。 该方法包括对变形图案执行第二卷积处理以产生第一变形图案轮廓。 该方法包括处理第一变形图案轮廓以产生第二变形图案轮廓。 该方法包括识别第二接近校正图案轮廓和第二变形图案轮廓之间的不匹配。 该方法包括响应于识别确定变形图案是否是光刻刻画的。

    GEOMETRIC PATTERN DATA QUALITY VERIFICATION FOR MASKLESS LITHOGRAPHY
    7.
    发明申请
    GEOMETRIC PATTERN DATA QUALITY VERIFICATION FOR MASKLESS LITHOGRAPHY 有权
    几何图形数据质量验证用于MASKLESS LITHOGRAPHY

    公开(公告)号：US20130055173A1

    公开(公告)日：2013-02-28

    申请号：US13217345

    申请日：2011-08-25

    Applicant: Hung-Chun Wang ,  Pei-Shiang Chen ,  Tzu-Chin Lin ,  Cheng-Hung Chen ,  Shih-Chi Wang ,  Nian-Fuh Cheng ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

    Inventor： Hung-Chun Wang ,  Pei-Shiang Chen ,  Tzu-Chin Lin ,  Cheng-Hung Chen ,  Shih-Chi Wang ,  Nian-Fuh Cheng ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

    IPC: G06F17/50

    CPC classification number: G03F7/2059

    Abstract: The present disclosure involves a method of performing a maskless lithography process. The method includes providing a proximity correction pattern. The method includes generating a deformed pattern based on the proximity correction pattern. The method includes performing a first convolution process to the proximity correction pattern to generate a first proximity correction pattern contour. The method includes processing the first proximity correction pattern contour to generate a second proximity correction pattern contour. The method includes performing a second convolution process to the deformed pattern to generate a first deformed pattern contour. The method includes processing the first deformed pattern contour to generate a second deformed pattern contour. The method includes identifying mismatches between the second proximity correction pattern contour and the second deformed pattern contour. The method includes determining whether the deformed pattern is lithography-ready in response to the identifying.

    Abstract translation: 本公开涉及执行无掩模光刻工艺的方法。 该方法包括提供接近校正模式。 该方法包括基于接近校正图案生成变形图案。 该方法包括对接近校正图案执行第一卷积处理以产生第一邻近校正图案轮廓。 该方法包括处理第一接近校正图案轮廓以产生第二邻近校正图案轮廓。 该方法包括对变形图案执行第二卷积处理以产生第一变形图案轮廓。 该方法包括处理第一变形图案轮廓以产生第二变形图案轮廓。 该方法包括识别第二接近校正图案轮廓和第二变形图案轮廓之间的不匹配。 该方法包括响应于识别确定变形图案是否是光刻刻画的。

    Method for high volume e-beam lithography
    8.
    发明授权
    Method for high volume e-beam lithography 有权
    大容量电子束光刻方法

    公开(公告)号：US08468473B1

    公开(公告)日：2013-06-18

    申请号：US13492408

    申请日：2012-06-08

    Applicant: Hung-Chun Wang ,  Tzu-Chin Lin ,  Chia-Chi Lin ,  Nian-Fuh Cheng ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

    Inventor： Hung-Chun Wang ,  Tzu-Chin Lin ,  Chia-Chi Lin ,  Nian-Fuh Cheng ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

    IPC: G06F17/50

    CPC classification number: H01J37/3026 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70475 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31771

    Abstract: The present disclosure describes a method of forming a pattern by an electron beam lithography system. The method includes receiving an integrated circuit (IC) design layout data having a polygon and a forbidden pattern, modifying the polygon and the forbidden pattern using an electron proximity correction (EPC) technique, stripping the modified polygon into subfields, converting the stripped polygon to an electron beam writer format data, and writing the electron beam writer formatted polygon onto a substrate by an electron beam writer. Stripping the modified polygon includes finding the modified forbidden pattern as a reference layer, and stitching the modified polygon to avoid stitching the modified forbidden pattern.

    Abstract translation: 本公开描述了通过电子束光刻系统形成图案的方法。 该方法包括接收具有多边形和禁止图案的集成电路（IC）设计布局数据，使用电子接近校正（EPC）技术修改多边形和禁止图案，将修改的多边形剥离成子字段，将剥离的多边形转换为 电子束写入器格式数据，并通过电子束写入器将电子束写入器格式化的多边形写入到衬底上。 剥离修改的多边形包括找到修改的禁止图案作为参考层，并且修剪修改的多边形以避免修改修改的禁止图案。

    STRIPING METHODOLOGY FOR MASKLESS LITHOGRAPHY
    9.
    发明申请
    STRIPING METHODOLOGY FOR MASKLESS LITHOGRAPHY 有权
    用于MASKLESS LITHOGRAPHY的划线方法

    公开(公告)号：US20130061187A1

    公开(公告)日：2013-03-07

    申请号：US13225617

    申请日：2011-09-06

    Applicant: Hung-Chun Wang ,  Tzu-Chin Lin ,  Nian-Fuh Cheng ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

    Inventor： Hung-Chun Wang ,  Tzu-Chin Lin ,  Nian-Fuh Cheng ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

    IPC: G06F17/50

    CPC classification number: G03F7/70425 ,  H01J37/3174

    Abstract: The present disclosure involves a method of performing a maskless lithography process. The method includes receiving a computer layout file for an integrated circuit (IC) device. The layout file contains a plurality of IC sections. The method includes separating the computer layout file into a plurality of sub-files. The method includes striping the plurality of sub-files concurrently using a plurality of computer processors, thereby generating a plurality of striped sub-files. The method includes transferring the plurality of striped sub-files to a maskless lithography system.

    Abstract translation: 本公开涉及执行无掩模光刻工艺的方法。 该方法包括接收用于集成电路（IC）设备的计算机布局文件。 布局文件包含多个IC部分。 该方法包括将计算机布局文件分离成多个子文件。 该方法包括使用多个计算机处理器并行地分割多个子文件，从而生成多个条带化子文件。 该方法包括将多个条带化子文件传送到无掩模光刻系统。

Patent Agency Ranking