发明申请
US20120238076A1 Method and Apparatus for Forming a III-V Family Layer 审中-公开
用于形成III-V族层的方法和装置

Method and Apparatus for Forming a III-V Family Layer
摘要:
Provided is an apparatus. The apparatus includes: a first deposition component that is operable to form a compound over a semiconductor wafer, the compound including at least one of: a III-family element and a V-family element; a second deposition component that is operable to form a passivation layer over the compound; and a transfer component that is operable to move the semiconductor wafer between the first and second deposition components, the transfer component enclosing a space that contains substantially no oxygen and substantially no silicon; wherein the loading component, the first and second deposition components, and the transfer component are all integrated into a single fabrication tool.
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