发明申请
- 专利标题: Method and Apparatus for Forming a III-V Family Layer
- 专利标题(中): 用于形成III-V族层的方法和装置
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申请号: US13482029申请日: 2012-05-29
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公开(公告)号: US20120238076A1公开(公告)日: 2012-09-20
- 发明人: Chi-Ming Chen , Chung-Yi Yu , Chia-Shiung Tsai , Ho-Yung David Hwang
- 申请人: Chi-Ming Chen , Chung-Yi Yu , Chia-Shiung Tsai , Ho-Yung David Hwang
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L21/20
- IPC分类号: H01L21/20
摘要:
Provided is an apparatus. The apparatus includes: a first deposition component that is operable to form a compound over a semiconductor wafer, the compound including at least one of: a III-family element and a V-family element; a second deposition component that is operable to form a passivation layer over the compound; and a transfer component that is operable to move the semiconductor wafer between the first and second deposition components, the transfer component enclosing a space that contains substantially no oxygen and substantially no silicon; wherein the loading component, the first and second deposition components, and the transfer component are all integrated into a single fabrication tool.