NANO-WIRE FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING THE TRANSISTOR, AND INTEGRATED CIRCUIT INCLUDING THE TRANSISTOR

Invention Application

US20120238082A1 NANO-WIRE FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING THE TRANSISTOR, AND INTEGRATED CIRCUIT INCLUDING THE TRANSISTOR 有权

Title translation: 纳米线场效应晶体管，制造晶体管的方法和包括晶体管的集成电路

Please log in to see more content

Patent Title: NANO-WIRE FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING THE TRANSISTOR, AND INTEGRATED CIRCUIT INCLUDING THE TRANSISTOR
Patent Title (中): 纳米线场效应晶体管，制造晶体管的方法和包括晶体管的集成电路
Application No.: US13477239

Application Date: 2012-05-22
Publication No.: US20120238082A1

Publication Date: 2012-09-20
Inventor: Yongxun LIU , Takashi Matsukawa , Kazuhiko Endo , Shinichi Ouchi , Kunihiro Sakamoto , Meishoku Masahara
Applicant: Yongxun LIU , Takashi Matsukawa , Kazuhiko Endo , Shinichi Ouchi , Kunihiro Sakamoto , Meishoku Masahara
Applicant Address: JP Tokyo
Assignee: National Institute of Advanced Industrial Science and Technology
Current Assignee: National Institute of Advanced Industrial Science and Technology
Current Assignee Address: JP Tokyo
Priority: JP2008-150439 20080609
Main IPC: H01L21/20
IPC: H01L21/20 ; B82Y40/00

NANO-WIRE FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING THE TRANSISTOR, AND INTEGRATED CIRCUIT INCLUDING THE TRANSISTOR

Abstract:

A manufacturing method of the nano-wire field effect transistor, comprising steps of preparing an SOI substrate having a (100) surface orientation; processing a silicon crystal layer comprising the SOI substrate into a standing plate-shaped member having a rectangular cross-section; processing the silicon crystal layer by orientation dependent wet etching and thermal oxidation into a shape where two triangular columnar members are arranged one above the other with a spacing from each other so as to face along the ridge lines of the triangular columnar members; and processing the two triangular columnar members into a circular columnar member configuring a nano-wire by hydrogen annealing or thermal oxidation.

Abstract(Chinese):

一种纳米线场效应晶体管的制造方法，包括制备具有（100）表面取向的SOI衬底的步骤; 将包括SOI衬底的硅晶体层加工成具有矩形横截面的立式板状构件; 通过取向依赖的湿式蚀刻和热氧化将硅晶体层加工成两个三角柱状部件彼此之间彼此间隔开的形状，以便沿三角形柱状部件的棱线面对; 并通过氢退火或热氧化将两个三角形柱状构件加工成构成纳米线的圆形柱状构件。

Public/Granted literature

US08399330B2 Nano-wire field effect transistor, method for manufacturing the transistor, and integrated circuit including the transistor Public/Granted day:2013-03-19

Information query

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/20	....半导体材料在基片上的沉积，例如外延生长