发明申请
- 专利标题： SPUTTERING TARGET OF MAGNETIC MATERIAL
- 专利标题（中）： 磁性材料溅射目标
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申请号： US13513387申请日： 2010-10-21
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公开(公告)号： US20120241316A1公开(公告)日： 2012-09-27
- 发明人: Atsutoshi Arakawa
- 申请人： Atsutoshi Arakawa
- 申请人地址： JP Tokyo
- 专利权人： JX NIPPON MINING & METALS CORPORATION
- 当前专利权人： JX NIPPON MINING & METALS CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-281540 20091211
- 国际申请： PCT/JP2010/068552 WO 20101021
- 主分类号： C23C14/34
- IPC分类号： C23C14/34 ; B22D31/00 ; C22F1/18 ; C23C14/14
摘要：
A magnetic sputtering target which contains B and is obtained by a melting and casting method, wherein the B content is 10 at % or more and 50 at % or less, and the remainder is one or more elements selected from Co, Fe, and Ni. Based on the method of the present invention, the sputtering target, in which gaseous impurities are few, there are no cracks and fractures, and segregation of its main constituent elements is minimal, is obtained. Consequently, when sputtered with a magnetron sputtering device comprising a DC power supply, this sputtering target yields a significant effect of being able to inhibit the generation of particles during sputtering, and improve the production yield upon forming thin films.
公开/授权文献
- US09269389B2 Sputtering target of magnetic material 公开/授权日：2016-02-23
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