公开(公告)号：US09181617B2

公开(公告)日：2015-11-10

申请号：US13808938

申请日：2011-01-28

Applicant: Shin-ichi Ogino ,  Atsushi Sato ,  Yuichiro Nakamura ,  Atsutoshi Arakawa

Inventor： Shin-ichi Ogino ,  Atsushi Sato ,  Yuichiro Nakamura ,  Atsutoshi Arakawa

IPC: H01F41/18 ,  C23C14/34 ,  C22C1/04 ,  C22C19/07 ,  C22C32/00 ,  C22F1/10 ,  G11B5/851 ,  H01F10/16

CPC classification number: C23C14/3407 ,  C22C1/0433 ,  C22C19/07 ,  C22C32/0026 ,  C22F1/10 ,  C23C14/3414 ,  G11B5/851 ,  H01F10/16 ,  H01F41/18

Abstract: Provided is a sputtering target of ferromagnetic material comprising a metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a phase (A) which is a basis metal, and metal phases (B) having a component composition different from the peripheral texture within the phase (A), the area ratio occupied by oxides within 1 μm from the most outer periphery of metal phases (B) is 80% or less, and the average grain size of the metal phases (B) is 10 μm or more and 150 μm or less. Provided is a sputtering target of ferromagnetic material capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device.

Abstract translation: 提供一种铁磁材料的溅射靶，其包含具有20摩尔％以下的Cr的组成的金属，余量为Co; 其特征在于，所述目标结构体包括作为基础金属的相（A）和具有与相（A）以外的周边构造不同的成分组成的金属相（B），最大范围内的氧化物占所述面积比1μm以内 金属相（B）的外周的平均粒径为80％以下，金属相（B）的平均粒径为10μm以上且150μm以下。 本发明提供能够抑制溅射时粒子产生的强磁性材料的溅射靶，提高通过磁通以通过磁控溅射装置实现稳定的放电。

公开(公告)号：US20130220804A1

公开(公告)日：2013-08-29

申请号：US13877411

申请日：2011-12-06

Applicant: Atsutoshi Arakawa ,  Yuki Ikeda

Inventor： Atsutoshi Arakawa ,  Yuki Ikeda

IPC: C23C14/34

CPC classification number: C23C14/3414 ,  C22C1/0433 ,  C22C1/10 ,  C22C5/04 ,  C22C19/07 ,  C22C32/0026 ,  C22C2202/02 ,  G11B5/851 ,  H01F10/123 ,  H01F41/183

Abstract: Provided is a ferromagnetic material sputtering target having a metal composition comprising 5 mol % or more of Pt and the balance of Co, wherein the target has a structure including a metal base (A) and a phase (B) of a Co—Pt alloy containing 40 to 76 mol % of Pt in the metal base (A). Further provided is a ferromagnetic material sputtering target having a metal composition comprising 5 mol % or more of Pt, 20 mol % or less of Cr, and the balance of Co, wherein the target has a structure including a metal base (A) and a phase (B) of a Co—Pt alloy containing 40 to 76 mol % of Pt in the metal base (A). The present invention provides a ferromagnetic material sputtering target that can improve the leakage magnetic flux to allow stable discharge with a magnetron sputtering device.

Abstract translation: 本发明提供一种具有包含5mol％以上Pt和余量的Co的金属组合物的铁磁材料溅射靶，其中，所述靶具有包括金属基体（A）和Co-Pt合金的相（B）的结构 在金属基体（A）中含有40〜76摩尔％的Pt。 还提供了具有包含5mol％以上的Pt，20mol％以下的Cr和余量的Co的金属组合物的铁磁材料溅射靶，其中靶具有包含金属基底（A）和 在金属基体（A）中含有40〜76摩尔％的Pt的Co-Pt合金的相（B）。 本发明提供一种铁磁材料溅射靶，其可以提高漏磁通量，从而使磁控溅射装置稳定放电。

公开(公告)号：US20130213804A1

公开(公告)日：2013-08-22

申请号：US13881246

申请日：2011-12-15

Applicant: Atsutoshi Arakawa ,  Yuki Ikeda

Inventor： Atsutoshi Arakawa ,  Yuki Ikeda

IPC: C23C14/34

CPC classification number: C23C14/3407 ,  C23C14/3414 ,  G11B5/851 ,  H01F41/183

Abstract: Provided is a ferromagnetic material sputtering target comprising a metal having a composition that Cr is contained in an amount of 20 mol % or less, Pt is contained in an amount of 5 mol % or more, and the remainder is Co, wherein the target includes a base metal (A) and, within the base metal (A), a Co—Pt alloy phase (B) containing 40 to 76 mol % of Pt, and a metal or alloy phase (C), which is different from the phase (B) and is composed of Co or an alloy comprising Co as a main component. The present invention improves the leakage magnetic flux to provide a ferromagnetic material sputtering target that can perform stable discharge with a magnetron sputtering apparatus.

Abstract translation: 本发明提供一种含有金属含量为20摩尔％以下，含有5摩尔％以上的Pt，余量为Co的金属的铁磁材料溅射靶，其中，靶包含 贱金属（A）和贱金属（A）内含有40〜76摩尔％的Pt的Co-Pt合金相（B）和不同于相的金属或合金相（C） （B），由Co或Co组成的合金构成。 本发明改进了漏磁通量，从而提供可以用磁控溅射装置进行稳定放电的铁磁材料溅射靶。

公开(公告)号：US20120097535A1

公开(公告)日：2012-04-26

申请号：US13320840

申请日：2010-09-30

Applicant: Shin-ichi Ogino ,  Atsushi Sato ,  Yuichiro Nakamura ,  Atsutoshi Arakawa

Inventor： Shin-ichi Ogino ,  Atsushi Sato ,  Yuichiro Nakamura ,  Atsutoshi Arakawa

IPC: C23C14/06

CPC classification number: C23C14/3414 ,  B22F2998/00 ,  C22C19/07 ,  C22C32/00 ,  C22C2202/02 ,  H01F41/183 ,  C22C32/0026 ,  B22F9/082

Abstract: A ferromagnetic sputtering target comprising metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a basis metal (A), and flat phases (B), containing 90 wt % or more of Co, within the basis metal (A), the average grain size of the phases (B) is 10 μm or more and 150 μm or less, and the average aspect ratio of the phases (B) is 1:2 to 1:10. Provided is a ferromagnetic sputtering target capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device.

Abstract translation: 一种铁磁溅射靶，其包含具有20摩尔％以下的Cr的组成的金属，余量为Co; 其特征在于，在所述基体金属（A）中，所述基体金属（A）和含有90重量％以上的Co的平坦相（B），所述相（B）的平均粒径为10μm， 多于150μm以下，相（B）的平均纵横比为1:2〜1:10。 本发明提供能够抑制溅射时的粒子产生的铁磁性溅射靶，提高通过磁通以通过磁控溅射装置实现稳定的放电。

公开(公告)号：US20080102022A1

公开(公告)日：2008-05-01

申请号：US11667676

申请日：2005-11-16

Applicant: Atsutoshi Arakawa ,  Ryuichi Hirano

Inventor： Atsutoshi Arakawa ,  Ryuichi Hirano

IPC: C01B19/00

CPC classification number: C30B29/48 ,  C30B11/00 ,  C30B23/02 ,  H01L31/09 ,  H01L31/1832 ,  Y10S977/824

Abstract: It is to define the resistivity and the contained amount of impurities of a CdTe system compound semiconductor single crystal and to provide a CdTe system compound semiconductor single crystal which is useful as a substrate for optical devices such as an infrared sensor and the like. In a CdTe system compound semiconductor single crystal for an optical device, a Group 1 (1A) element is included in a range of 5×1014 to 6×1015cm−3 in the crystal, a total amount of a Group 13 (3B) element and a Group 17 (7B) element included in the crystal is less than 2×1015cm−3 and less than a total amount of the Group 1 (1A) element, and resistivity of the crystal is in a range of 10 to 104 Ωcm.

Abstract translation: 为了限定CdTe系化合物半导体单晶的电阻率和含有量的杂质，提供可用作红外线传感器等的光学元件的基板的CdTe系化合物半导体单晶。 在用于光学器件的CdTe系统化合物半导体单晶中，组1（1A）元素包括在5×10 14至6×10 15 cm -3的范围内， -3，晶体中包含的第13族（3B）元素和第17（7B）族元素的总量小于2×10 15 cm > -3以下且小于第1族（1A）元素的总量，并且该结晶的电阻率在10〜104Ω·m范围内。

公开(公告)号：US20050118739A1

公开(公告)日：2005-06-02

申请号：US10502228

申请日：2002-12-17

Applicant: Toshiaki Asahi ,  Kenji Sato ,  Atsutoshi Arakawa

Inventor： Toshiaki Asahi ,  Kenji Sato ,  Atsutoshi Arakawa

IPC: C30B15/00 ,  C30B15/12 ,  C30B27/02 ,  C30B29/48 ,  H01L21/00

CPC classification number: C30B15/00 ,  C30B15/12 ,  C30B27/02 ,  C30B29/48

Abstract: A method for producing a compound semiconductor single crystal by a liquid encapsulated Czochralski method, including containing a semiconductor raw material and an encapsulating material in a raw material melt-containing portion having a first crucible having a bottom and a cylindrical shape and a second crucible disposed within the first crucible and having a communication hole communicating with the first crucible in a bottom portion thereof; melting the raw material by heating the raw material melt-containing portion; and growing a crystal by making a seed crystal contact with a surface of the raw material melt in a state covered with the encapsulating material and by pulling up the seed crystal. A heater temperature is controlled so that a diameter of a growing crystal becomes approximately equal to an inner diameter of the second crucible, and the crystal is grown by maintaining a surface of the growing crystal in a state covered with the encapsulating material until termination of crystal growth.

Abstract translation: 一种通过液体封装的Czochralski法制备化合物半导体单晶的方法，包括在具有底部和圆筒形状的第一坩埚的原料熔融物部分中包含半导体原料和封装材料，以及设置第二坩埚 在第一坩埚内并且在其底部具有与第一坩埚连通的连通孔; 通过加热原料熔融物部分来熔化原料; 并且通过在被封装材料覆盖的状态下使晶种与原料熔融物的表面接触并且拉起晶种来生长晶体。 控制加热器温度使得生长的晶体的直径变得近似等于第二坩埚的内径，并且通过将生长晶体的表面保持在被封装材料覆盖的状态直到晶体结束来生长晶体 成长。

公开(公告)号：US20050000403A1

公开(公告)日：2005-01-06

申请号：US10497916

申请日：2003-10-03

Applicant: Toshiaki Asahi ,  Kenji Sato ,  Takayuki Yabe ,  Atsutoshi Arakawa

Inventor： Toshiaki Asahi ,  Kenji Sato ,  Takayuki Yabe ,  Atsutoshi Arakawa

IPC: C30B15/00 ,  C30B15/12 ,  C30B27/02 ,  C30B29/48 ,  C30B21/06 ,  C30B28/10 ,  C30B30/04

CPC classification number: C30B27/02 ,  C30B15/12 ,  C30B29/48 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

Abstract: In a production method for producing a compound semiconductor single crystal by LEC method using a crystal growth apparatus with a double crucible structure, it was made to grow up a crystal by covering the second crucible with a plate-like member having a pass-through slot for being capable of introducing a crystal pulling-up shaft having a seed crystal holding part at a tip into the second crucible and creating a state where an atmosphere within the second crucible scarcely changes (a semi-sealed structure).

Abstract translation: 在使用具有双坩埚结构的晶体生长装置的LEC方法制造化合物半导体单晶的制造方法中，通过用具有贯通槽的板状构件覆盖第二坩埚而使晶体长大， 能够将具有尖端的晶种保持部的晶体提升轴引入到第二坩埚中，形成第二坩埚内的气氛几乎不变化（半密封结构）的状态。

公开(公告)号：US20130206593A1

公开(公告)日：2013-08-15

申请号：US13882233

申请日：2011-12-15

Applicant: Atsutoshi Arakawa ,  Yuki Ikeda

Inventor： Atsutoshi Arakawa ,  Yuki Ikeda

IPC: C23C14/34

CPC classification number: C23C14/3414 ,  G11B5/851 ,  H01F41/183

Abstract: Provided is a ferromagnetic material sputtering target comprising a metal having a composition that Cr is contained in an amount of 20 mol % or less, Ru is contained in an amount of 0.5 mol % or more and 30 mol % or less, and the remainder is Co, wherein the target has a structure including a base metal (A) and, within the base metal (A), a Co—Ru alloy phase (B) containing 35 mol % or more of Ru. The present invention provides a ferromagnetic material sputtering target that can improve leakage magnetic flux to allow stable discharge with a magnetron sputtering apparatus.

Abstract translation: 本发明提供一种含有金属含量为20摩尔％以下的组成的金属的铁磁材料溅射靶，其含量为0.5摩尔％以上且30摩尔％以下，余量为 Co，其中所述靶具有包括贱金属（A）和所述贱金属（A）内的包含35mol％或更多Ru的Co-Ru合金相（B）的结构。 本发明提供一种铁磁材料溅射靶，其能够提高泄漏磁通量，从而通过磁控管溅射装置进行稳定的放电。

公开(公告)号：US20120318669A1

公开(公告)日：2012-12-20

申请号：US13579606

申请日：2011-02-16

Applicant: Yuki Ikeda ,  Yuichiro Nakamura ,  Atsutoshi Arakawa

Inventor： Yuki Ikeda ,  Yuichiro Nakamura ,  Atsutoshi Arakawa

IPC: C23C14/06 ,  B05D5/12 ,  B32B15/04 ,  C23C14/08

CPC classification number: C04B35/645 ,  B22F3/14 ,  B22F7/08 ,  C04B37/026 ,  C04B2237/123 ,  C04B2237/126 ,  C04B2237/34 ,  C04B2237/405 ,  C22C1/0433 ,  C22C1/051 ,  C22C19/07 ,  C22C38/002 ,  C23C14/3414 ,  H01F41/183

Abstract: Provided is a sputtering target-backing plate assembly where a raw material powder prepared so as to have the composition of a magnetic material sputtering target is filled in a die together with a backing plate and hot-pressed, thereby being bonded to the backing plate simultaneously with sintering of the magnetic material target powder.It is an object of the present invention to provide a sputtering target-backing plate assembly having a high average pass through flux and allowing more stable sputtering, by disposing the raw material powder for a target on the backing plate and sintering them.By simultaneously performing sintering and bonding, a sputtering target-backing plate assembly has a shorter manufacturing process, can shorten manufacturing period, and does not cause a problem of detachment due to an increase in temperature during sputtering. In addition, it is also an object of the present invention to provide a sputtering target-backing plate assembly at a reduced cost and with an improved average pass through flux (PTF).

Abstract translation: 提供了一种溅射靶 - 背板组件，其中将具有磁性材料溅射靶的组成的原料粉末与背板一起填充在模具中并进行热压，从而同时粘合到背板上 通过烧结磁性材料目标粉末。 本发明的目的是提供一种具有高平均通过焊剂的溅射靶 - 背板组件，通过将用于靶材的原料粉末设置在背板上并进行烧结来提供更稳定的溅射。 通过同时进行烧结和接合，溅射靶 - 背板组件具有较短的制造工艺，可以缩短制造周期，并且不会由于溅射期间的温度升高而引起分离的问题。 此外，本发明的另一个目的是以降低的成本提供溅射靶 - 背板组件，并且具有改进的平均通过焊剂（PTF）。

公开(公告)号：US07544343B2

公开(公告)日：2009-06-09

申请号：US11667676

申请日：2005-11-16

Applicant: Atsutoshi Arakawa ,  Ryuichi Hirano

Inventor： Atsutoshi Arakawa ,  Ryuichi Hirano

IPC: C01B19/04 ,  C30B29/48 ,  H01L29/12

CPC classification number: C30B29/48 ,  C30B11/00 ,  C30B23/02 ,  H01L31/09 ,  H01L31/1832 ,  Y10S977/824

Abstract: It is to define the resistivity and the contained amount of impurities of a CdTe system compound semiconductor single crystal and to provide a CdTe system compound semiconductor single crystal which is useful as a substrate for optical devices such as an infrared sensor and the like. In a CdTe system compound semiconductor single crystal for an optical device, a Group 1 (1A) element is included in a range of 5×1014 to 6×1015 cm−3 in the crystal, a total amount of a Group 13 (3B) element and a Group 17 (7B) element included in the crystal is less than 2×1015 cm−3 and less than a total amount of the Group 1 (1A) element, and resistivity of the crystal is in a range of 10 to 104 Ωcm.

Abstract translation: 为了限定CdTe系化合物半导体单晶的电阻率和含有量的杂质，提供可用作红外线传感器等的光学元件的基板的CdTe系化合物半导体单晶。 在用于光学器件的CdTe系统化合物半导体单晶中，第1组（1A）元素在晶体中包括在5×10 14至6×10 15 cm -3的范围内，第13（3B）族元素和基团 包含在晶体中的17（7B）元素小于2×10 15 cm -3且小于第1族（1A）元素的总量，并且晶体的电阻率在10〜104Ω·cm的范围内。