发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13422247申请日： 2012-03-16
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公开(公告)号： US20120241737A1公开(公告)日： 2012-09-27
- 发明人: Yuki IMOTO , Tetsunori MARUYAMA , Yuta ENDO
- 申请人： Yuki IMOTO , Tetsunori MARUYAMA , Yuta ENDO
- 申请人地址： JP Atsugi-shi
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2011-067195 20110325
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/44
摘要：
In the transistor including an oxide semiconductor film, which includes a film for capturing hydrogen from the oxide semiconductor film (a hydrogen capture film) and a film for diffusing hydrogen (a hydrogen permeable film), hydrogen is transferred from the oxide semiconductor film to the hydrogen capture film through the hydrogen permeable film by heat treatment. Specifically, a base film or a protective film of the transistor including an oxide semiconductor film has a stacked-layer structure of the hydrogen capture film and the hydrogen permeable film. At this time, the hydrogen permeable film is formed on a side which is in contact with the oxide semiconductor film. After that, hydrogen released from the oxide semiconductor film is transferred to the hydrogen capture film through the hydrogen permeable film by the heat treatment.
公开/授权文献
- US08956944B2 Semiconductor device and method for manufacturing the same 公开/授权日：2015-02-17
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