发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
-
申请号： US13425246申请日： 2012-03-20
-
公开(公告)号： US20120241762A1公开(公告)日： 2012-09-27
- 发明人: Takao NODA , Ryoichi Ohara , Kenya Sano , Toru Sugiyama
- 申请人： Takao NODA , Ryoichi Ohara , Kenya Sano , Toru Sugiyama
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-065037 20110323
- 主分类号： H01L29/161
- IPC分类号： H01L29/161 ; H01L29/47
摘要：
According to one embodiment, a semiconductor device includes a semiconductor layer of a first conductivity type, a first region of a second conductivity type selectively provided in a first major surface of the semiconductor layer, a second region of the second conductivity type selectively provided in the first major surface and connected to the first region, a first electrode provided in contact with the semiconductor layer and the first region, a second electrode provided in contact with the second region, and a third electrode electrically connected to a second major surface of the semiconductor layer opposite to the first major surface.
公开/授权文献
- US08866151B2 Semiconductor device 公开/授权日：2014-10-21
信息查询
IPC分类:
