发明申请
US20120241816A1 Stabilization of Metal Silicides in PFET Transistors by Incorporation of Stabilizing Species in a Si/Ge Semiconductor Material
审中-公开
通过在Si / Ge半导体材料中引入稳定物质来稳定PFET晶体管中的金属硅化物
- 专利标题： Stabilization of Metal Silicides in PFET Transistors by Incorporation of Stabilizing Species in a Si/Ge Semiconductor Material
- 专利标题（中）： 通过在Si / Ge半导体材料中引入稳定物质来稳定PFET晶体管中的金属硅化物
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申请号： US13052772申请日： 2011-03-21
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公开(公告)号： US20120241816A1公开(公告)日： 2012-09-27
- 发明人: Stefan Flachowsky , Thilo Scheiper , Peter Javorka
- 申请人： Stefan Flachowsky , Thilo Scheiper , Peter Javorka
- 申请人地址： DE Dresden KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co., KG,GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co., KG,GLOBALFOUNDRIES INC.
- 当前专利权人地址： DE Dresden KY Grand Cayman
- 主分类号： H01L29/772
- IPC分类号： H01L29/772 ; H01L21/336
摘要：
When forming sophisticated P-channel transistors, the metal silicide agglomeration in a germanium-containing strain-inducing semiconductor alloy may be avoided or at least significantly reduced by incorporating a carbon and/or nitrogen species in a highly controllable manner. In some illustrative embodiments, the carbon species or nitrogen species is incorporated during the epitaxial growth process so as to form a surface layer of the strain-inducing semiconductor alloy with a desired nitrogen and/or carbon concentration and with a desired thickness without unduly affecting any other device areas.
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