发明申请
- 专利标题: DRAM Arrays
- 专利标题(中): DRAM阵列
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申请号: US13490369申请日: 2012-06-06
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公开(公告)号: US20120241832A1公开(公告)日: 2012-09-27
- 发明人: Mark Fischer
- 申请人: Mark Fischer
- 申请人地址: US ID Boise
- 专利权人: MICRON TECHNOLOGY, INC.
- 当前专利权人: MICRON TECHNOLOGY, INC.
- 当前专利权人地址: US ID Boise
- 主分类号: H01L27/108
- IPC分类号: H01L27/108
摘要:
The invention includes methods for utilizing partial silicon-on-insulator (SOI) technology in combination with fin field effect transistor (finFET) technology to form transistors particularly suitable for utilization in dynamic random access memory (DRAM) arrays. The invention also includes DRAM arrays having low rates of refresh. Additionally, the invention includes semiconductor constructions containing transistors with horizontally-opposing source/drain regions and channel regions between the source/drain regions. The transistors can include gates that encircle at least three-fourths of at least portions of the channel regions, and in some aspects can include gates that encircle substantially an entirety of at least portions of the channel regions.
公开/授权文献
- US08742483B2 DRAM arrays 公开/授权日:2014-06-03