发明申请
- 专利标题： NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
-
申请号： US13235425申请日： 2011-09-18
-
公开(公告)号： US20120241846A1公开(公告)日： 2012-09-27
- 发明人: Kaori KAWASAKI , Yoshiaki Fukuzumi , Masaru Kito , Tomoko Fujiwara , Takeshi Imamura , Ryouhei Kirisawa , Hideaki Aochi
- 申请人： Kaori KAWASAKI , Yoshiaki Fukuzumi , Masaru Kito , Tomoko Fujiwara , Takeshi Imamura , Ryouhei Kirisawa , Hideaki Aochi
- 优先权： JP2011-066180 20110324
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/28
摘要：
According to one embodiment, a nonvolatile semiconductor memory device comprises a first conductive layer, a second conductive layer, a first inter-electrode insulating film, and a third conductive layer stacked above the first conductive layer, a memory film, a semiconductor layer, an insulating member, and a silicide layer. The memory film and the semiconductor layer is formed on the inner surface of through hole provided in the second conductive layer, the first inter-electrode insulating film, and the third conductive layer. The insulating member is buried in a slit dividing the second conductive layer, the first inter-electrode insulating film, and the third conductive layer. The silicide layer is formed on surfaces of the second conductive layer and the third conductive layer in the slit. The distance between the second conductive layer and the third conductive layer along the inner surface of the slit is longer than that of along the stacking direction.
公开/授权文献
信息查询
IPC分类:
