发明申请
- 专利标题： Shallow Source and Drain Architecture in an Active Region of a Semiconductor Device Having a Pronounced Surface Topography by Tilted Implantation
- 专利标题（中）： 通过倾斜植入具有广泛表面形貌的半导体器件的有源区域中的浅源和漏极结构
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申请号： US13052583申请日： 2011-03-21
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公开(公告)号： US20120241864A1公开(公告)日： 2012-09-27
- 发明人: Martin Gerhardt , Peter Javorka , Juergen Faul
- 申请人： Martin Gerhardt , Peter Javorka , Juergen Faul
- 申请人地址： DE Dresden KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG,GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG,GLOBALFOUNDRIES INC.
- 当前专利权人地址： DE Dresden KY Grand Cayman
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
In sophisticated semiconductor devices, a shallow drain and source concentration profile may be obtained for active regions having a pronounced surface topography by performing tilted implantation steps upon incorporating the drain and source dopant species. In this manner, a metal silicide may be reliably embedded in the drain and source regions.
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