发明申请
- 专利标题： MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- 专利标题（中）： 磁性元件和磁记忆
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申请号： US13310154申请日： 2011-12-02
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公开(公告)号： US20120241881A1公开(公告)日： 2012-09-27
- 发明人: Tadaomi DAIBOU , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
- 申请人： Tadaomi DAIBOU , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
- 申请人地址： JP Sendai-shi JP Tokyo
- 专利权人： Tohoku University,KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： Tohoku University,KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Sendai-shi JP Tokyo
- 优先权： JP2011-068868 20110325
- 主分类号： H01L43/10
- IPC分类号： H01L43/10
摘要：
A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45≦x
公开/授权文献
- US08680632B2 Magnetoresistive element and magnetic memory 公开/授权日：2014-03-25
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