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6 条记录 (耗时 0.039 秒)

    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    2.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
    磁性元件和磁记忆

    公开(公告)号：US20120241827A1

    公开(公告)日：2012-09-27

    申请号：US13210678

    申请日：2011-08-16

    申请人： Tadaomi DAIBOU ,  Minoru Amano ,  Daisuke Saida ,  Junichi Ito ,  Yuichi Ohsawa ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Hiroaki Yoda

    发明人： Tadaomi DAIBOU ,  Minoru Amano ,  Daisuke Saida ,  Junichi Ito ,  Yuichi Ohsawa ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Hiroaki Yoda

    IPC分类号： H01L27/22 ,  H01L43/10 ,  H01L43/02

    CPC分类号： H01L43/02 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.

    摘要翻译： 根据实施例的磁阻元件包括：第一至第三铁磁层和第一非磁性层，第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴，所述第三铁磁层包括 多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。 旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动，旋转磁场由进动运动产生，并且是 施加到第一铁磁层，并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。

    MAGNETIC ELEMENT AND NONVOLATILE MEMORY DEVICE
    4.
    发明申请
    MAGNETIC ELEMENT AND NONVOLATILE MEMORY DEVICE 失效
    磁性元件和非易失性存储器件

    公开(公告)号：US20120243308A1

    公开(公告)日：2012-09-27

    申请号：US13227959

    申请日：2011-09-08

    申请人： Daisuke SAIDA ,  Minoru AMANO ,  Junichi ITO ,  Yuichi OHSAWA ,  Saori KASHIWADA ,  Chikayoshi KAMATA ,  Tadaomi DAIBOU

    发明人： Daisuke SAIDA ,  Minoru AMANO ,  Junichi ITO ,  Yuichi OHSAWA ,  Saori KASHIWADA ,  Chikayoshi KAMATA ,  Tadaomi DAIBOU

    IPC分类号： G11C11/15 ,  H01L29/82

    CPC分类号： G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

    摘要： According to one embodiment, a magnetic element includes first and second conductive layers, an intermediate interconnection, and first and second stacked units. The intermediate interconnection is provided between the conductive layers. The first stacked unit is provided between the first conductive layer and the interconnection, and includes first and second ferromagnetic layer and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second stacked unit is provided between the second conductive layer and the interconnection, and includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a magnetic field to act on the second ferromagnetic layer.

    摘要翻译： 根据一个实施例，磁性元件包括第一和第二导电层，中间互连以及第一和第二堆叠单元。 中间互连设置在导电层之间。 第一层叠单元设置在第一导电层和互连之间，并且包括第一和第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。 第二堆叠单元设置在第二导电层和互连之间，并且包括第三和第四铁磁层以及设置在第三和第四铁磁层之间的第二非磁性层。 通过使自旋极化电子和磁场作用于第二铁磁层来确定第二铁磁层的磁化方向。

    MAGNETIC RECORDING ELEMENT AND NONVOLATILE MEMORY DEVICE
    6.
    发明申请
    MAGNETIC RECORDING ELEMENT AND NONVOLATILE MEMORY DEVICE 失效
    磁记录元件和非易失性存储器件

    公开(公告)号：US20120236633A1

    公开(公告)日：2012-09-20

    申请号：US13228040

    申请日：2011-09-08

    申请人： Daisuke SAIDA ,  Minoru AMANO ,  Junichi ITO ,  Yuichi OHSAWA ,  Saori KASHIWADA ,  Chikayoshi KAMATA ,  Tadaomi DAIBOU

    发明人： Daisuke SAIDA ,  Minoru AMANO ,  Junichi ITO ,  Yuichi OHSAWA ,  Saori KASHIWADA ,  Chikayoshi KAMATA ,  Tadaomi DAIBOU

    IPC分类号： G11C11/15 ,  G11B5/66

    CPC分类号： G11B5/66 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08

    摘要： According to one embodiment, a magnetic recording element includes a stacked body. The stacked body includes a first and a second stacked unit. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit is stacked with the first stacked unit and includes third and fourth ferromagnetic layers and a second nonmagnetic layer. The fourth ferromagnetic layer is stacked with the third ferromagnetic layer. The second nonmagnetic layer is provided between the third and fourth ferromagnetic layers. An outer edge of the fourth ferromagnetic layer includes a portion outside an outer edge of the first stacked unit in a plane. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a rotating magnetic field to act on the second ferromagnetic layer.

    摘要翻译： 根据一个实施例，磁记录元件包括堆叠体。 堆叠体包括第一和第二堆叠单元。 第一堆叠单元包括第一和第二铁磁层和第一非磁性层。 第一非磁性层设置在第一和第二铁磁层之间。 第二堆叠单元与第一堆叠单元堆叠并且包括第三和第四铁磁层和第二非磁性层。 第四铁磁层与第三铁磁层层叠。 第二非磁性层设置在第三和第四铁磁层之间。 第四铁磁层的外边缘包括平面内第一堆叠单元的外边缘外侧的部分。 通过使自旋极化电子和旋转磁场作用于第二铁磁层来确定第二铁磁层的磁化方向。