发明申请
US20120243323A1 Nonvolatile Memory and Method for Improved Programming With Reduced Verify 有权
非易失性存储器和改进编程方法,减少验证

  • 专利标题: Nonvolatile Memory and Method for Improved Programming With Reduced Verify
  • 专利标题(中): 非易失性存储器和改进编程方法,减少验证
  • 申请号: US13071170
    申请日: 2011-03-24
  • 公开(公告)号: US20120243323A1
    公开(公告)日: 2012-09-27
  • 发明人: Yingda DongKen OowadaCynthia Hsu
  • 申请人: Yingda DongKen OowadaCynthia Hsu
  • 主分类号: G11C16/10
  • IPC分类号: G11C16/10
Nonvolatile Memory and Method for Improved Programming With Reduced Verify
摘要:
A group of memory cells of a nonvolatile memory is programmed in parallel in a programming pass with a minimum of verify steps from an erased state to respective target states by a staircase waveform. The memory states are demarcated by a set of increasing demarcation threshold values (V1, . . . , VN). Initially in the programming pass, the memory cells are verified relative to a test reference threshold value. This test reference threshold has a value offset past a designate demarcation threshold value Vi among the set by a predetermined margin. The overshoot of each memory cell when programmed past Vi, to be more or less than the margin can be determined. Accordingly, memory cells found to have an overshoot more than the margin are counteracted by having their programming rate slowed down in a subsequent portion of the programming pass so as to maintain a tighter threshold distribution.
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