发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13491737申请日： 2012-06-08
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公开(公告)号： US20120244642A1公开(公告)日： 2012-09-27
- 发明人: Kouichi Nagai
- 申请人： Kouichi Nagai
- 申请人地址： JP Yokohama-shi
- 专利权人： FUJITSU SEMICONDUCTOR LIMITED
- 当前专利权人： FUJITSU SEMICONDUCTOR LIMITED
- 当前专利权人地址： JP Yokohama-shi
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A method for manufacturing a semiconductor device including a semiconductor substrate having transistors formed thereon, a first interlayer insulating film formed above the semiconductor substrate and the transistors, a ferroelectric capacitor formed above the first interlayer insulating film, a second interlayer insulating film formed above the first interlayer insulating film and the ferroelectric capacitor, a first metal wiring formed on the second interlayer insulating film, and a protection film formed on an upper surface of the wiring but not on a side surface of the wiring.
公开/授权文献
- US09129853B2 Semiconductor device and method of manufacturing the same 公开/授权日：2015-09-08
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