发明申请
- 专利标题： RESONANCE TUNNELING DEVICES AND METHODS OF MANUFACTURING THE SAME
- 专利标题（中）： 谐振隧道装置及其制造方法
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申请号： US13368354申请日： 2012-02-08
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公开(公告)号： US20120248415A1公开(公告)日： 2012-10-04
- 发明人: Jonghyurk PARK , Seung Youl Kang
- 申请人： Jonghyurk PARK , Seung Youl Kang
- 申请人地址： KR Daejeon
- 专利权人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人地址： KR Daejeon
- 优先权： KR10-2011-0028909 20110330
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L21/20 ; B82Y99/00 ; B82Y40/00
摘要：
Provided are a resonance tunneling device and a method of manufacturing the resonance tunneling device. The resonance tunneling device includes a substrate, a plurality of electrodes disposed on the substrate, and a nanoparticle layer disposed between the electrodes, and doped with an impurity. The nanoparticle layer uses the impurity to exhibit resonance tunneling where a current peak occurs at a target bias voltage applied between the electrodes.
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