MOLECULAR ELECTRONIC DEVICE INCLUDING ORGANIC DIELECTRIC THIN FILM AND METHOD OF FABRICATING THE SAME
    2.
    发明申请
    MOLECULAR ELECTRONIC DEVICE INCLUDING ORGANIC DIELECTRIC THIN FILM AND METHOD OF FABRICATING THE SAME 失效
    包括有机电介质薄膜的分子电子器件及其制造方法

    公开(公告)号:US20080054256A1

    公开(公告)日:2008-03-06

    申请号:US11760872

    申请日:2007-06-11

    IPC分类号: H01L51/30 H01L51/40

    摘要: Provided are a molecular electronic device and a method of fabricating the molecular electronic device. The molecular electronic device includes a substrate, an organic dielectric thin film formed over the substrate, a molecular active layer formed on the organic dielectric thin film and having a charge trap site, and an electrode formed on the molecular active layer. The organic dielectric thin film may be immobilized on the electrode or a Si layer by a self-assembled method. The organic dielectric thin film may include first and second molecular layers bound together through hydrogen bonds. An organic compound may be self-assembled over the substrate to form the organic dielectric thin film. The organic compound may include an M′-R-T structure, where M′, R and T represent a thiol or silane derivative, a saturated or unsaturated C1 to C20 hydrocarbon group which is substituted or unsubstituted with fluorine (F), and an amino(—NH2) or carboxyl (—COOH) group, respectively.

    摘要翻译: 提供分子电子器件和制造分子电子器件的方法。 分子电子器件包括衬底,在衬底上形成的有机电介质薄膜,形成在有机电介质薄膜上并具有电荷陷阱位置的分子活性层和形成在分子活性层上的电极。 可以通过自组装方法将有机电介质薄膜固定在电极或Si层上。 有机电介质薄膜可以包括通过氢键结合在一起的第一和第二分子层。 有机化合物可以在衬底上自组装形成有机介电薄膜。 有机化合物可以包括M'-RT结构,其中M',R和T表示硫醇或硅烷衍生物,饱和或不饱和C 1至C 20烃 分别被氟(F)取代或未取代的基团和氨基(-NH 2/2)或羧基(-COOH)基团。

    MOLECULAR ELECTRONIC DEVICE INCLUDING ORGANIC DIELECTRIC THIN FILM AND METHOD OF FABRICATING THE SAME
    3.
    发明申请
    MOLECULAR ELECTRONIC DEVICE INCLUDING ORGANIC DIELECTRIC THIN FILM AND METHOD OF FABRICATING THE SAME 审中-公开
    包括有机电介质薄膜的分子电子器件及其制造方法

    公开(公告)号:US20100297808A1

    公开(公告)日:2010-11-25

    申请号:US12814742

    申请日:2010-06-14

    IPC分类号: H01L51/40

    摘要: Provided are a molecular electronic device and a method of fabricating the molecular electronic device. The molecular electronic device includes a substrate, an organic dielectric thin film formed over the substrate, a molecular active layer formed on the organic dielectric thin film and having a charge trap site, and an electrode formed on the molecular active layer. The organic dielectric thin film may be immobilized on the electrode or a Si layer by a self-assembled method. The organic dielectric thin film may include first and second molecular layers bound together through hydrogen bonds. An organic compound may be self-assembled over the substrate to form the organic dielectric thin film. The organic compound may include an M′-R-T structure, where M′, R and T represent a thiol or silane derivative, a saturated or unsaturated C1 to C20 hydrocarbon group which is substituted or unsubstituted with fluorine (F), and an amino(—NH2) or carboxyl (—COOH) group, respectively.

    摘要翻译: 提供分子电子器件和制造分子电子器件的方法。 分子电子器件包括衬底,在衬底上形成的有机电介质薄膜,形成在有机电介质薄膜上并具有电荷陷阱位置的分子活性层和形成在分子活性层上的电极。 可以通过自组装方法将有机电介质薄膜固定在电极或Si层上。 有机电介质薄膜可以包括通过氢键结合在一起的第一和第二分子层。 有机化合物可以在衬底上自组装形成有机介电薄膜。 有机化合物可以包括M'-RT结构,其中M',R和T表示硫醇或硅烷衍生物,被氟(F)取代或未取代的饱和或不饱和的C1至C20烃基和氨基( -NH 2)或羧基(-COOH)基团。

    METHOD OF FORMING NANOCOMPOSITE SOLUTION, AND NANOCOMPOSITE PHOTOVOLTAIC DEVICE
    5.
    发明申请
    METHOD OF FORMING NANOCOMPOSITE SOLUTION, AND NANOCOMPOSITE PHOTOVOLTAIC DEVICE 失效
    形成纳米复合溶液的方法和纳米复合光伏器件

    公开(公告)号:US20110220186A1

    公开(公告)日:2011-09-15

    申请号:US12860568

    申请日:2010-08-20

    申请人: Jonghyurk PARK

    发明人: Jonghyurk PARK

    IPC分类号: H01L31/04 H01B1/02 H01B1/22

    摘要: Provided is a method of forming a nanocomposite solution, and a nanocomposite photovoltaic device. In the method, a metal oxide nanorod solution is prepared and a nanoparticle solution is prepared. The metal oxide nanorod solution and the nanoparticle solution are mixed to form a nanocomposite solution.

    摘要翻译: 提供了形成纳米复合溶液的方法和纳米复合光伏器件。 在该方法中,制备金属氧化物纳米棒溶液并制备纳米颗粒溶液。 将金属氧化物纳米棒溶液和纳米颗粒溶液混合以形成纳米复合物溶液。

    METHOD OF FORMING SENSOR FOR DETECTING GASES AND BIOCHEMICAL MATERIALS, INTEGRATED CIRCUIT HAVING THE SENSOR, AND METHOD OF MANUFACTURING THE INTEGRATED CIRCUIT
    6.
    发明申请
    METHOD OF FORMING SENSOR FOR DETECTING GASES AND BIOCHEMICAL MATERIALS, INTEGRATED CIRCUIT HAVING THE SENSOR, AND METHOD OF MANUFACTURING THE INTEGRATED CIRCUIT 审中-公开
    形成用于检测气体和生物材料的传感器的方法,具有传感器的集成电路以及制造集成电路的方法

    公开(公告)号:US20080121946A1

    公开(公告)日:2008-05-29

    申请号:US11736658

    申请日:2007-04-18

    IPC分类号: H01L29/78 H01L21/00

    CPC分类号: G01N27/122 G01N27/127

    摘要: A method of forming a sensor for detecting gases and biochemical materials that can be fabricated at a temperature in a range from room temperature to 400° C., a metal oxide semiconductor field effect transistor (MOSFET)-based integrated circuit including the sensor, and a method of manufacturing the integrated circuit are provided. The integrated circuit includes a semiconductor substrate. The sensor for detecting gases and biochemical materials includes a pair of electrodes formed on a first region of the semiconductor substrate, and a metal oxide nano structure layer formed on surfaces of the pair electrodes. A heater is formed to perform thermal treatment to re-use the material detected in the metal oxide nano structure layer. Also, a signal processor is formed by a MOSFET to process a predetermined signal obtained from a quantity change of a current flowing through the pair of electrodes of the sensor. To form the sensor, the metal oxide nano structure layer is formed on surfaces of the pair of electrodes at a temperature in a range from room temperature to 400° C.

    摘要翻译: 一种形成用于检测可在室温至400℃的温度范围内制造的气体和生物化学材料的传感器的方法,基于金属氧化物半导体场效应晶体管(MOSFET)的集成电路,包括该传感器,以及 提供了一种制造集成电路的方法。 集成电路包括半导体衬底。 用于检测气体和生化材料的传感器包括形成在半导体衬底的第一区域上的一对电极和形成在该对电极的表面上的金属氧化物纳米结构层。 形成加热器以进行热处理以重新使用在金属氧化物纳米结构层中检测的材料。 此外,信号处理器由MOSFET形成以处理从流过传感器的一对电极的电流的量变化获得的预定信号。 为了形成传感器,金属氧化物纳米结构层在室温至400℃的温度范围内形成在该对电极的表面上。