发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13517879申请日： 2012-06-14
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公开(公告)号： US20120248513A1公开(公告)日： 2012-10-04
- 发明人: Hidekazu MIYAIRI
- 申请人： Hidekazu MIYAIRI
- 申请人地址： JP Atsugi-shi
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2009-057437 20090311
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A space is provided under part of a semiconductor layer. Specifically, a structure in which an eaves portion (a projecting portion, an overhang portion) is formed in the semiconductor layer. The eaves portion is formed as follows: a stacked-layer structure in which a conductive layer, an insulating layer, and a semiconductor layer are stacked in this order is etched collectively to determine a pattern of a gate electrode; and a pattern of the semiconductor layer is formed while side-etching is performed.
公开/授权文献
- US08441051B2 Semiconductor device and manufacturing method thereof 公开/授权日：2013-05-14
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