发明申请
- 专利标题: Method of Manufacturing Light-Emitting Device, and Evaporation Donor Substrate
- 专利标题(中): 制造发光装置和蒸发供体基板的方法
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申请号: US13442133申请日: 2012-04-09
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公开(公告)号: US20120251772A1公开(公告)日: 2012-10-04
- 发明人: Tomoya Aoyama , Yosuke Sato , Kohei Yokoyama , Rena Takahashi
- 申请人: Tomoya Aoyama , Yosuke Sato , Kohei Yokoyama , Rena Takahashi
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 优先权: JP2007-275066 20071023
- 主分类号: H05B33/10
- IPC分类号: H05B33/10 ; B32B3/22 ; B32B3/24
摘要:
The present invention relates to a donor substrate and a method of manufacturing a light-emitting device. The donor substrate includes a reflective layer including an opening portion, a light absorption layer covering the opening portion of the reflective layer over the reflective layer, a heat insulating layer including an opening portion in a position overlapped with the opening portion of the reflective layer over the light absorption layer, and a material layer including a light-emitting material covering the opening portion of the heat insulating layer over the heat insulating layer. A target substrate and the donor substrate are disposed to face each other, and an EL layer is formed over the target substrate by performing light irradiation from a rear surface of the donor substrate.
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