发明申请
- 专利标题: PHOTOMASK BLANK AND METHOD FOR MANUFACTURING PHOTOMASK
- 专利标题(中): PHOTOMASK BLANK及其制造方法
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申请号: US13494530申请日: 2012-06-12
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公开(公告)号: US20120251930A1公开(公告)日: 2012-10-04
- 发明人: Yosuke Kojima , Hiroki Yoshikawa , Yukio Inazuki , Ryuji Koitabashi
- 申请人: Yosuke Kojima , Hiroki Yoshikawa , Yukio Inazuki , Ryuji Koitabashi
- 申请人地址: JP Tokyo JP Tokyo
- 专利权人: SHIN-ETSU CHEMICAL CO., LTD.,TOPPAN PRINTING CO., LTD.
- 当前专利权人: SHIN-ETSU CHEMICAL CO., LTD.,TOPPAN PRINTING CO., LTD.
- 当前专利权人地址: JP Tokyo JP Tokyo
- 优先权: JP2009-283198 20091214
- 主分类号: G03F1/46
- IPC分类号: G03F1/46 ; G03F1/26 ; B82Y30/00 ; B82Y40/00
摘要:
According to one embodiment, a photomask blank wherein a second film is stacked on a first film, the first film containing chromium and which is not substantially etched by the dry etching using fluorine and which is etchable by the dry etching using oxygen-containing chlorine, and the second film containing no chromium and which is etchable by dry etching using fluorine and dry etching using oxygen-containing chlorine.
公开/授权文献
- US09091931B2 Photomask blank and method for manufacturing photomask 公开/授权日:2015-07-28
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