发明申请
- 专利标题： METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON
- 专利标题（中）： 在玻璃基材上生长异质单晶或大颗粒半导体膜的方法及其设备
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申请号： US13495699申请日： 2012-06-13
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公开(公告)号： US20120252192A1公开(公告)日： 2012-10-04
- 发明人: Praveen Chaudhari , Karin Chaudhari , Ashok Chaudhari , Pia Chaudhari , Jifeng Liu
- 申请人： Praveen Chaudhari , Karin Chaudhari , Ashok Chaudhari , Pia Chaudhari , Jifeng Liu
- 申请人地址： US NH Hanover US NY Briarcliff Manor
- 专利权人： TRUSTEES OF DARTMOUTH COLLEGE,SOLAR-TECTIC LLC
- 当前专利权人： TRUSTEES OF DARTMOUTH COLLEGE,SOLAR-TECTIC LLC
- 当前专利权人地址： US NH Hanover US NY Briarcliff Manor
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays