公开(公告)号：US20120252192A1

公开(公告)日：2012-10-04

申请号：US13495699

申请日：2012-06-13

申请人： Praveen Chaudhari ,  Karin Chaudhari ,  Ashok Chaudhari ,  Pia Chaudhari ,  Jifeng Liu

发明人： Praveen Chaudhari ,  Karin Chaudhari ,  Ashok Chaudhari ,  Pia Chaudhari ,  Jifeng Liu

IPC分类号： H01L21/20

CPC分类号： C30B13/02 ,  C30B13/24 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02612 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays

摘要翻译： 廉价的半导体通过在廉价的衬底上沉积单晶或大晶粒硅来制造。 这些半导体在足够低的温度（例如低于玻璃熔点的温度）下生产。 所生产的半导体适用于诸如光电或显示器的半导体器件

公开(公告)号：US20120142536A1

公开(公告)日：2012-06-07

申请号：US13155508

申请日：2011-06-08

申请人： Praveen Chaudhari ,  Karin Chaudhari ,  Ashok Chaudhari ,  Pia Chaudhari

发明人： Praveen Chaudhari ,  Karin Chaudhari ,  Ashok Chaudhari ,  Pia Chaudhari

IPC分类号： H01L39/12

CPC分类号： H01L39/2483

摘要： The present invention concerns the enhancement of critical current densities in cuprate superconductors. Such enhancement of critical current densities include using wave function symmetry and restricting movement of Abrikosov (A) vortices, Josephson (J) vortices, or Abrikosov-Josephson (A-J) vortices by using the half integer vortices associated with d-wave symmetry present in the grain boundary.

摘要翻译： 本发明涉及增加铜酸盐超导体中的临界电流密度。 临界电流密度的这种增强包括使用波函数对称性并且通过使用与存在于...中的d波对称相关联的半整数涡旋来限制Abrikosov（A）涡流，约瑟夫森（J）涡流或阿布里科索夫约瑟夫森（AJ）涡旋的运动 晶界。

公开(公告)号：US20100237272A1

公开(公告)日：2010-09-23

申请号：US12774465

申请日：2010-05-05

申请人： Praveen Chaudhari ,  Karin Chaudhari ,  Ashok Chaudhari ,  Pia Chaudhari

发明人： Praveen Chaudhari ,  Karin Chaudhari ,  Ashok Chaudhari ,  Pia Chaudhari

IPC分类号： H01F1/04 ,  H01L21/368

CPC分类号： H01L31/0392 ,  C03C17/3618 ,  C03C17/3636 ,  C03C17/3649 ,  C03C17/3668 ,  C03C17/3678 ,  C03C2218/15 ,  C23C14/025 ,  C23C14/18 ,  C23C14/5873 ,  C30B11/12 ,  C30B25/02 ,  H01L21/02653 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/03921 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T428/24372 ,  Y10T428/24421

摘要： A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies.

摘要翻译： 公开了从包含金属和半导体的共晶合金制造半导体膜的方法。 通过非均相成核，所述膜在相对便宜的缓冲基底（例如玻璃）上以沉积温度沉积。 具体地说，所述膜在所述沉积温度下以固定温度气相沉积，其中所述沉积温度高于所述共晶合金的共晶温度，并低于衬底软化的温度。 这样的电影可以广泛应用于光伏和显示技术。

公开(公告)号：US20110033969A1

公开(公告)日：2011-02-10

申请号：US12903750

申请日：2010-10-13

申请人： Praveen Chaudhari ,  Karin Chaudhari ,  Ashok Chaudhari ,  Pia Chaudhari

发明人： Praveen Chaudhari ,  Karin Chaudhari ,  Ashok Chaudhari ,  Pia Chaudhari

IPC分类号： H01L31/18 ,  B82Y99/00

CPC分类号： H01L31/1804 ,  C30B11/12 ,  C30B23/025 ,  C30B25/02 ,  C30B25/183 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02595 ,  H01L21/02598 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02625 ,  H01L21/02645 ,  H01L21/02653 ,  H01L31/0216 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/0475 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/18

摘要： A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies.

摘要翻译： 公开了从包含金属和半导体的共晶合金制造半导体膜的方法。 通过非均相成核，所述膜在相对便宜的缓冲基底（例如玻璃）上以沉积温度沉积。 具体地说，所述膜在所述沉积温度下以固定温度气相沉积，其中所述沉积温度高于所述共晶合金的共晶温度，并低于衬底软化的温度。 这样的电影可以广泛应用于光伏和显示技术。