发明申请
US20120252209A1 PLASMA NITRIDING METHOD, PLASMA NITRIDING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
审中-公开
等离子体氮化方法，等离子体纳米装置及制造半导体器件的方法
- 专利标题： PLASMA NITRIDING METHOD, PLASMA NITRIDING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： 等离子体氮化方法，等离子体纳米装置及制造半导体器件的方法
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申请号： US13433746申请日： 2012-03-29
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公开(公告)号： US20120252209A1公开(公告)日： 2012-10-04
- 发明人: Yoshiro Kabe , Yoshihiro Sato
- 申请人： Yoshiro Kabe , Yoshihiro Sato
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-080077 20110331
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; C23C14/06 ; H01L21/318
摘要：
A plasma nitriding method includes placing, in a processing chamber, a target object having a structure including a first portion containing a metal and a second portion containing silicon to expose surfaces of the first and the second portion; and performing a plasma process on the target object to selectively nitride the surface of the first portion such that a metal nitride film is selectively formed on the surface of the first portion. Further, the first portion contains tungsten, and a nitrogen-containing plasma is generated by supplying a nitrogen-containing gas into the processing chamber and setting an internal pressure of the processing chamber in a range from 133 Pa to 1333 Pa. The surface of the first portion is selectively nitrided without nitriding the surface of the second portion by the nitrogen-containing plasma such that a tungsten nitride film is formed on the surface of the first portion.
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