发明申请
- 专利标题： Piezo-phototronic Effect Devices
- 专利标题（中）： 压电光电效应器件
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申请号： US13252314申请日： 2011-10-04
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公开(公告)号： US20120256160A1公开(公告)日： 2012-10-11
- 发明人: Zhong L. Wang , Qing Yang
- 申请人： Zhong L. Wang , Qing Yang
- 申请人地址： US GA Atlanta
- 专利权人： Georgia Tech Research Corporation
- 当前专利权人： Georgia Tech Research Corporation
- 当前专利权人地址： US GA Atlanta
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L21/02 ; B82Y99/00
摘要：
A semiconducting device includes a piezoelectric structure that has a first end and an opposite second end. A first conductor is in electrical communication with the first end and a second conductor is in electrical communication with the second end so as to form an interface therebetween. A force applying structure is configured to maintain an amount of strain in the piezoelectric member sufficient to generate a desired electrical characteristic in the semiconducting device.
公开/授权文献
- US08530983B2 Piezo-phototronic effect devices 公开/授权日：2013-09-10
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