发明申请
- 专利标题： INSULATED SUBSTRATE, PROCESS FOR PRODUCTION OF INSULATED SUBSTRATE, PROCESS FOR FORMATION OF WIRING LINE, WIRING SUBSTRATE, AND LIGHT-EMITTING ELEMENT
- 专利标题（中）： 绝缘基板，绝缘基板的制造工艺，布线形成工艺，布线基板和发光元件
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申请号： US13518770申请日： 2010-12-14
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公开(公告)号： US20120256224A1公开(公告)日： 2012-10-11
- 发明人: Yusuke Hatanaka , Yoshinori Hotta , Akio Uesugi
- 申请人： Yusuke Hatanaka , Yoshinori Hotta , Akio Uesugi
- 申请人地址： JP Minato-ku, Tokyo
- 专利权人： FUJIFILM CORPORATION
- 当前专利权人： FUJIFILM CORPORATION
- 当前专利权人地址： JP Minato-ku, Tokyo
- 优先权： JP2009-295050 20091225; JP2010-009826 20100120; JP2010-042287 20100226; JP2010-064186 20100319; JP2010-097856 20100421
- 国际申请： PCT/JP2010/072463 WO 20101214
- 主分类号： H01L33/50
- IPC分类号： H01L33/50 ; C25D11/12 ; C25D11/18 ; C25D5/48 ; H05K1/05 ; C25D7/00
摘要：
Provided is an insulating substrate which includes an aluminum substrate and an anodized film covering a whole surface of the aluminum substrate and in which the anodized film contains intermetallic compound particles with a circle equivalent diameter of 1 μm or more in an amount of up to 2,000 pcs/mm3. Also provided is a method for manufacturing the insulating substrate which includes an anodizing treatment step for anodizing the aluminum substrate. The anodized film of the insulating substrate covering the whole surface of the aluminum substrate contains intermetallic compound particles with a circle equivalent diameter of 1 μm or more in an amount of up to 2,000 pcs/mm3.
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