发明申请
US20120258588A1 SELF FORMING METAL FLUORIDE BARRIERS FOR FLUORINATED LOW-K DIELECTRICS
审中-公开
用于氟化低K电介质的自制金属氟化物阻挡层
- 专利标题： SELF FORMING METAL FLUORIDE BARRIERS FOR FLUORINATED LOW-K DIELECTRICS
- 专利标题（中）： 用于氟化低K电介质的自制金属氟化物阻挡层
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申请号： US13529067申请日： 2012-06-21
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公开(公告)号： US20120258588A1公开(公告)日： 2012-10-11
- 发明人: Christopher J. Jezewski , Daniel J. Zierath , Florian Gstrein
- 申请人： Christopher J. Jezewski , Daniel J. Zierath , Florian Gstrein
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
A device and method of forming fluoride metal barriers at an interface of a fluorinated low-K dielectric and Cu or Cu alloy interconnects is disclosed. The fluoride metal barriers may prevent interconnects from reacting with the fluorinated low-K dielectric. The method may include depositing a thin film of metal or metal alloy on the fluorinated low-K dielectric. The thin film may include a metal or metal alloying element that reacts with free fluorine and/or fluorine compounds from the fluorinated low-K dielectric to form fluoride metal barriers.