发明申请
- 专利标题： METHOD OF FABRICATING COAXIAL THROUGH-SILICON VIA
- 专利标题（中）： 通过硅制造同轴线的方法
-
申请号： US13495092申请日： 2012-06-13
-
公开(公告)号： US20120258589A1公开(公告)日： 2012-10-11
- 发明人: Richard P. Volant , Mukta G. Farooq , Paul F. Findeis , Kevin S. Petrarca
- 申请人： Richard P. Volant , Mukta G. Farooq , Paul F. Findeis , Kevin S. Petrarca
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
A method of fabricating a through-silicon via (TSV) structure forming a unique coaxial or triaxial interconnect within the silicon substrate. The TSV structure is provided with two or more independent electrical conductors insulated from another and from the substrate. The electrical conductors can be connected to different voltages or ground, making it possible to operate the TSV structure as a coaxial or triaxial device. Multiple layers using various insulator materials can be used as insulator, wherein the layers are selected based on dielectric properties, fill properties, interfacial adhesion, CTE match, and the like. The TSV structure overcomes defects in the outer insulation layer that may lead to leakage.
公开/授权文献
- US08394715B2 Method of fabricating coaxial through-silicon via 公开/授权日：2013-03-12