Semiconductor structures are disclosed that include at least one FET gate stack located on a semiconductor substrate. The at least one FET gate stack includes source and drain extension regions located within the semiconductor substrate. A device channel is also present between the source and drain extension regions and beneath the at least one gate stack. Embedded stressor elements are located on opposite sides of the at least one FET gate stack and within the semiconductor substrate. Each stressor element includes a lower layer of a first epitaxy doped semiconductor material having a lattice constant that is different from a lattice constant of the semiconductor substrate and imparts a strain in the device channel, and an upper layer of a second epitaxy doped semiconductor material. At least one monolayer of dopant is located within the upper layer of each of the embedded stressor elements.