发明申请
- 专利标题： EMBEDDED STRESSOR FOR SEMICONDUCTOR STRUCTURES
- 专利标题（中）： 用于半导体结构的嵌入式压电器
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申请号： US13529558申请日： 2012-06-21
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公开(公告)号： US20120261728A1公开(公告)日： 2012-10-18
- 发明人: Dechao Guo , Shu-Jen Han , Pranita Kulkarni , Philip J. Oldiges
- 申请人： Dechao Guo , Shu-Jen Han , Pranita Kulkarni , Philip J. Oldiges
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; a plurality of spacers disposed on laterally opposing sides of the gate stack; source and drain regions proximate to the spacers, and a channel region subjacent to the gate stack and disposed between the source and drain regions; and a stressor subjacent to the channel region, and embedded within the semiconductor substrate, the embedded stressor being formed of a triangular-shape.
公开/授权文献
- US08354720B2 Embedded stressor for semiconductor structures 公开/授权日：2013-01-15
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