发明申请
US20120261757A1 STRAINED THIN BODY CMOS DEVICE HAVING VERTICALLY RAISED SOURCE/DRAIN STRESSORS WITH SINGLE SPACER
有权
具有单个间距的垂直源/源压应力的应变薄体CMOS器件
- 专利标题: STRAINED THIN BODY CMOS DEVICE HAVING VERTICALLY RAISED SOURCE/DRAIN STRESSORS WITH SINGLE SPACER
- 专利标题(中): 具有单个间距的垂直源/源压应力的应变薄体CMOS器件
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申请号: US13531053申请日: 2012-06-22
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公开(公告)号: US20120261757A1公开(公告)日: 2012-10-18
- 发明人: Bruce B. Doris , Kangguo Cheng , Ali Khakifirooz , Pranita Kulkarni , Ghavam G. Shahidi
- 申请人: Bruce B. Doris , Kangguo Cheng , Ali Khakifirooz , Pranita Kulkarni , Ghavam G. Shahidi
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L27/092
摘要:
A method of forming a transistor device includes forming a patterned gate structure over a semiconductor substrate; forming a spacer layer over the semiconductor substrate and patterned gate structure; removing horizontally disposed portions of the spacer layer so as to form a vertical sidewall spacer adjacent the patterned gate structure; and forming a raised source/drain (RSD) structure over the semiconductor substrate and adjacent the vertical sidewall spacer, wherein the RSD structure has a substantially vertical sidewall profile so as to abut the vertical sidewall spacer and produce one of a compressive and a tensile strain on a channel region of the semiconductor substrate below the patterned gate structure.