发明申请
- 专利标题： SOI DEVICE WITH DTI AND STI
- 专利标题（中）： 具有DTI和STI的SOI器件
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申请号： US13088376申请日： 2011-04-17
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公开(公告)号： US20120261792A1公开(公告)日： 2012-10-18
- 发明人: Kangguo Cheng , Bruce B. Doris , Ali Khakifirooz , Pranita Kulkarni
- 申请人： Kangguo Cheng , Bruce B. Doris , Ali Khakifirooz , Pranita Kulkarni
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/76
摘要：
An SOI structure including a semiconductor on insulator (SOI) substrate including a top silicon layer, an intermediate buried oxide (BOX) layer and a bottom substrate; at least two wells in the bottom substrate; a deep trench isolation (DTI) separating the two wells, the DTI having a top portion extending through the BOX layer and top silicon layer and a bottom portion within the bottom substrate wherein the bottom portion has a width that is larger than a width of the top portion; and at least two semiconductor devices in the silicon layer located over one of the wells, the at least two semiconductor devices being separated by a shallow trench isolation within the top silicon layer.
公开/授权文献
- US08525292B2 SOI device with DTI and STI 公开/授权日：2013-09-03
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