发明申请
US20120263887A1 TECHNIQUE AND APPARATUS FOR ION-ASSISTED ATOMIC LAYER DEPOSITION
审中-公开
用于辅助原子层沉积的技术和装置
- 专利标题： TECHNIQUE AND APPARATUS FOR ION-ASSISTED ATOMIC LAYER DEPOSITION
- 专利标题（中）： 用于辅助原子层沉积的技术和装置
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申请号： US13085615申请日： 2011-04-13
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公开(公告)号： US20120263887A1公开(公告)日： 2012-10-18
- 发明人: George D. Papasouliotis , Ludovic Godet
- 申请人： George D. Papasouliotis , Ludovic Godet
- 申请人地址： US MA Gloucester
- 专利权人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人地址： US MA Gloucester
- 主分类号： C23C16/50
- IPC分类号： C23C16/50 ; C23C16/52 ; C23C16/46 ; C23C16/02 ; C23C16/44 ; C23C16/458
摘要：
An apparatus for depositing a coating may comprise a first processing chamber configured to deposit a first reactant as a reactant layer on a substrate during a first time period. A second processing chamber may be configured to direct ions incident on the substrate at a second time and configured to deposit a second reactant on the substrate during a second time period, wherein the second reactant is configured to react with the reactant layer.