发明申请
- 专利标题： FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS
- 专利标题（中）： 膜沉积方法和膜沉积装置
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申请号： US13420723申请日： 2012-03-15
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公开(公告)号： US20120267340A1公开(公告)日： 2012-10-25
- 发明人: Akinobu KAKIMOTO , Satoshi Takagi , Toshiyuki Ikeuchi , Katsuhiko Komori , Kazuhide Hasebe
- 申请人： Akinobu KAKIMOTO , Satoshi Takagi , Toshiyuki Ikeuchi , Katsuhiko Komori , Kazuhide Hasebe
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-061216 20110318
- 主分类号： B44C1/22
- IPC分类号： B44C1/22 ; B05C11/00
摘要：
A disclosed film deposition method includes steps of loading plural substrates each of which includes a pattern including a concave part in a reaction chamber in the form of shelves; depositing a silicon oxide film on the plural substrates by supplying a silicon-containing gas and an oxygen-containing gas to the reaction chamber; etching the silicon oxide film deposited on the plural substrates in the step of depositing by supplying a fluorine-containing gas and an ammonia gas to the reaction chamber; and alternately repeating the step of depositing and the step of etching.
公开/授权文献
- US09005459B2 Film deposition method and film deposition apparatus 公开/授权日：2015-04-14
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