发明申请
US20120267737A1 SIDE SHIELDING CATHODE DESIGN FOR A RADIATION DETECTOR WITH IMPROVED EFFICIENCY
审中-公开
具有改进效率的辐射探测器的侧面遮蔽阴极设计
- 专利标题: SIDE SHIELDING CATHODE DESIGN FOR A RADIATION DETECTOR WITH IMPROVED EFFICIENCY
- 专利标题(中): 具有改进效率的辐射探测器的侧面遮蔽阴极设计
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申请号: US13451670申请日: 2012-04-20
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公开(公告)号: US20120267737A1公开(公告)日: 2012-10-25
- 发明人: Henry Chen , Salah Awadalla , Pramodha Marthandam
- 申请人: Henry Chen , Salah Awadalla , Pramodha Marthandam
- 申请人地址: CA Saanichton
- 专利权人: Redlen Technologies
- 当前专利权人: Redlen Technologies
- 当前专利权人地址: CA Saanichton
- 主分类号: H01L31/08
- IPC分类号: H01L31/08 ; H01L31/18
摘要:
A radiation detector includes a semiconductor substrate which contains front and rear major surfaces and at least one side surface, a guard ring and a plurality of anode electrode pixels located over the rear surface of the semiconductor substrate, where each anode electrode pixel is formed between adjacent pixel separation regions, a side insulating layer formed on the at least one side surface of the semiconductor substrate, a cathode electrode located over the front major surface of the semiconductor substrate, and an electrically conductive cathode extension formed over at least a portion of side insulating layer, where the cathode extension contacts an edge of the cathode electrode. Further embodiments include various methods of making such semiconductor radiation detector.
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