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1.
公开(公告)号:US20240219589A1
公开(公告)日:2024-07-04
申请号:US18602887
申请日:2024-03-12
IPC分类号: G01T1/24 , A61B6/42 , H01L27/146 , H05B3/22
CPC分类号: G01T1/244 , A61B6/4233 , A61B6/4266 , H01L27/14634 , H01L27/1469 , H05B3/22
摘要: Direct attach radiation detector structures include an application specific integrated circuit (ASIC), at least one radiation sensor located over a front surface of the ASIC, and a carrier board located over a back surface of the ASIC. In various embodiments, the carrier board may include one or more thermal management features that may reduce temperature non-uniformities in the detector structure. In additional embodiments, the carrier board may include one or more features to improve the manufacturability of the radiation detector unit.
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公开(公告)号:US11953452B2
公开(公告)日:2024-04-09
申请号:US17562288
申请日:2021-12-27
CPC分类号: G01N23/046 , A61B6/032 , A61B6/035 , A61B6/4233 , A61B6/4241 , G01T1/17 , G01T1/241 , G01N2223/501
摘要: An ionizing radiation detector, such as a photon counting computed tomography detector, includes a semiconductor material plate, a plurality of anodes located on a first side of the semiconductor material plate, where the gaps (i.e., streets) between adjacent anodes are less than 15 μm in width, and at least one cathode located on a second side of the semiconductor material plate. Ionizing radiation detectors according to various embodiments may have improved count rate stability (CRS) characteristics and a reduced number of Non-Conforming Pixels (NCPs) relative to conventional detectors.
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公开(公告)号:US11474050B2
公开(公告)日:2022-10-18
申请号:US17193219
申请日:2021-03-05
IPC分类号: G01N23/046 , G01N23/083
摘要: A radiation detector module includes a frame, a module circuit board connected to the frame, detector units that each include radiation sensors disposed above the frame and electrically connected to the module circuit board, and an optically and infrared radiation opaque, X-ray transparent, electrically insulating detector shield covering a top surface and at least one side surface of the radiation sensors.
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4.
公开(公告)号:US20210022695A1
公开(公告)日:2021-01-28
申请号:US16931800
申请日:2020-07-17
摘要: Various aspects include methods for compensating for the effects of charge sharing among pixelate detectors in X-ray detectors by applying a correspondence factor to counts of X-ray photons in energy bins to estimate incident X-ray photon energy bins. The correspondence factor may be determined by determining an incident X-ray photon energy spectrum, adjusting the incident X-ray photon energy spectrum to account for an energy resolution of the pixelated detector, generating a charge sharing model for the adjusted incident X-ray photon energy spectrum based on a percentage charge sharing parameter of the pixelated detector, applying the charge sharing model to energy bins of the pixelated detector to estimate counts in each of the energy bins, and determining the correspondence factor by comparing the estimated counts in each of the energy bins to counts in the energy bins that would be expected for the adjusting the incident X-ray photon energy spectrum.
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公开(公告)号:US20090321651A1
公开(公告)日:2009-12-31
申请号:US12111413
申请日:2008-04-29
申请人: Pinghe LU , Henry Chen , Glenn Bindley
发明人: Pinghe LU , Henry Chen , Glenn Bindley
CPC分类号: H01L31/115 , G01T1/00 , G01T1/24 , H01L27/14661 , H01L27/1469 , H05K3/323 , Y10S977/762 , Y10T156/10
摘要: A device includes (a) radiation detector including a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of said semiconductor substrate, and a plurality of anode electrodes on the rear surface of said semiconductor substrate, (b) a printed circuit board, and (c) an electrically conductive polymeric film disposed between circuit board and the anode electrodes. The polymeric film contains electrically conductive wires. The film bonds and electrically connects the printed circuit board and anode electrodes.
摘要翻译: (a)包括具有相对的前表面和后表面的半导体衬底的放射线检测器,位于所述半导体衬底的前表面上的阴极电极和在所述半导体衬底的后表面上的多个阳极电极,(b) 印刷电路板,以及(c)设置在电路板和阳极之间的导电聚合物膜。 聚合物膜包含导电线。 膜结合并电连接印刷电路板和阳极电极。
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6.
公开(公告)号:US07589324B2
公开(公告)日:2009-09-15
申请号:US11642819
申请日:2006-12-21
申请人: Henry Chen , Glenn Bindley , Pinghe Lu
发明人: Henry Chen , Glenn Bindley , Pinghe Lu
IPC分类号: G01T1/24
CPC分类号: G01T1/2928 , G01T1/241
摘要: A radiation detector is described having a semiconductor substrate with opposing front and rear surfaces, a cathode electrode located on the front surface of said semiconductor substrate, a plurality of anode electrodes located on the rear surface of said semiconductor substrate and a solder mask disposed above the anode electrodes. The solder mask has openings extending to the anode electrodes for placing solder in said openings.
摘要翻译: 描述了一种辐射检测器,其具有具有相对的前后表面的半导体衬底,位于所述半导体衬底的前表面上的阴极电极,位于所述半导体衬底的后表面上的多个阳极电极和设置在所述半导体衬底的上表面上的焊接掩模 阳极电极。 焊接掩模具有延伸到阳极电极的开口,用于将焊料放置在所述开口中。
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公开(公告)号:US12046623B2
公开(公告)日:2024-07-23
申请号:US17395794
申请日:2021-08-06
IPC分类号: H01L31/00 , A61B6/03 , H01L27/146
CPC分类号: H01L27/14659 , A61B6/032 , H01L27/14696 , H01L27/14698
摘要: A radiation detector tile includes a single crystal compound semiconductor tile having a zinc blende crystal structure, a (111) plane first major (i.e. prominent) surface and four side surfaces which are rotated by an angle of 13° to 17° to a {110} family of planes. The tile may be formed by dicing a (111) oriented wafer at directions which are rotated by an angle of 13° to 17° from in-plane slipping directions to reduce or eliminate the side surface chipping and sub surface dislocation defects.
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8.
公开(公告)号:US20230280486A1
公开(公告)日:2023-09-07
申请号:US18170290
申请日:2023-02-16
摘要: Various embodiments include methods of compensating for signal loss due to depth-of-interaction (DOI) effects in radiation detectors, thereby improving detector efficiency. Various embodiments may include detecting the amplitude of a primary charge signal in a first pixel of an array of detector pixels in response to a photon interaction event, detecting the amplitude of a secondary charge signal in a second pixel of the array, where the amplitude of the secondary charge signal has an opposite polarity than the polarity of the primary charge signal, and generating a corrected photon energy measurement of the photon interaction event by applying a correction to the detected amplitude of the primary charge signal based on the detected amplitude of the secondary charge signal. Further embodiments include methods of improving detector efficiency by compensating for both depth-of-interaction (DOI) and charge sharing effects.
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公开(公告)号:US11156568B2
公开(公告)日:2021-10-26
申请号:US16844484
申请日:2020-04-09
IPC分类号: G01N23/20008 , G01N23/207
摘要: Various aspects include methods and devices for reducing the scanning time for an X-ray diffraction scanner system by increasing the count rate or efficiency of the energy discriminating X-ray detector. In a first embodiment, the count rate of the energy discriminating X-ray detector is increased by increasing the number of detectors counting X-ray scatter photon in particular energy bins by configuring individual pixel detectors within a 2-D X-ray detector array to count photons within specific energy bins. In a second embodiment, the gain of amplifier components in the detector processing circuitry is increased in order to increase the energy resolution of the detector. In a third embodiment, the individual pixel detectors within a 2-D X-ray detector array are configured to count photons within specific energy bins and the gain of amplifier components in the detector processing circuitry is increased in order to increase the energy resolution of the detector.
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公开(公告)号:US20100193694A1
公开(公告)日:2010-08-05
申请号:US12364042
申请日:2009-02-02
申请人: Henry CHEN , Salah AWADALLA , Pinghe LU , Pramodha MARTHANDAM
发明人: Henry CHEN , Salah AWADALLA , Pinghe LU , Pramodha MARTHANDAM
IPC分类号: G01T1/24
CPC分类号: H01L31/085 , H01L27/14618 , H01L27/14658 , H01L31/0224 , H01L31/1832 , H01L2924/0002 , H01L2924/00
摘要: A radiation detector includes a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of the semiconductor substrate configured so as to receive radiation, and a plurality of anode electrodes formed on the rear surface of said semiconductor substrate. A work function of the cathode electrode material contacting the front surface of the semiconductor substrate is lower than a work function of the anode electrode material contacting the rear surface of the semiconductor substrate.
摘要翻译: 辐射检测器包括具有相对的前表面和后表面的半导体衬底,位于半导体衬底的前表面上以便接收辐射的阴极,以及形成在所述半导体衬底的后表面上的多个阳极。 与半导体基板的前表面接触的阴极电极的功函数低于与半导体基板的背面接触的阳极电极材料的功函数。
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