发明申请
- 专利标题: Semiconductor Device and Method of Controlling the Same
- 专利标题(中): 半导体器件及其控制方法
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申请号: US13540198申请日: 2012-07-02
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公开(公告)号: US20120268167A1公开(公告)日: 2012-10-25
- 发明人: Toshio Yamada , Kazuo Tanaka , Akinobu Watanabe , Shigeru Yamamoto , Yukio Hiraiwa
- 申请人: Toshio Yamada , Kazuo Tanaka , Akinobu Watanabe , Shigeru Yamamoto , Yukio Hiraiwa
- 申请人地址: JP Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 优先权: JP2009-211910 20090914
- 主分类号: H03K19/094
- IPC分类号: H03K19/094
摘要:
A pull-up circuit prevents generation of a leak current if a difference of potentials occurs between a power source voltage of a pull-up circuit (a bus-hold circuit) and an input terminal. A control terminal is provided in the bus-hold circuit. Inputs of the input terminal and the control terminal are input to a NOR gate, and an output of the NOR gate is input to a gate terminal of a first MOSFET that controls coupling between an input terminal and the power source voltage of the bus-hold circuit. A second MOSFET (“control” MOSFET) is provided as a switch that operates by an inverted output of the control terminal. By coupling the first MOSFET and the control MOSFET in series, the coupling between the input terminal and the power source voltage is controlled with a higher precision, thereby preventing generation of a leak current.
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