发明申请
- 专利标题: NITRIDE SEMICONDUCTOR LASER AND EPITAXIAL SUBSTRATE
- 专利标题(中): 氮化物半导体激光和外延衬底
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申请号: US13366636申请日: 2012-02-06
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公开(公告)号: US20120269222A1公开(公告)日: 2012-10-25
- 发明人: Takashi KYONO , Yohei ENYA , Takamichi SUMITOMO , Yusuke YOSHIZUMI , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
- 申请人: Takashi KYONO , Yohei ENYA , Takamichi SUMITOMO , Yusuke YOSHIZUMI , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
- 申请人地址: JP TOKYO JP Osaka-shi
- 专利权人: SONY CORPORATION,SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人: SONY CORPORATION,SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址: JP TOKYO JP Osaka-shi
- 优先权: JP2011-096443 20110422
- 主分类号: H01S5/343
- IPC分类号: H01S5/343
摘要:
A nitride semiconductor laser includes an electrically conductive support substrate with a primary surface of a gallium nitride based semiconductor, an active layer provided above the primary surface, and a p-type cladding region provided above the primary surface. The primary surface is inclined relative to a reference plane perpendicular to a reference axis extending in a direction of the c-axis of the gallium nitride based semiconductor. The p-type cladding region includes first and second p-type Group III nitride semiconductor layers. The first p-type semiconductor layer comprises an InAlGaN layer including built-in anisotropic strain. The second p-type semiconductor layer comprises semiconductor different from material of the InAlGaN layer. The first nitride semiconductor layer is provided between the second p-type semiconductor layer and the active layer. The second p-type semiconductor layer has a resistivity lower than that of the first p-type semiconductor layer.
公开/授权文献
- US08718110B2 Nitride semiconductor laser and epitaxial substrate 公开/授权日:2014-05-06