公开(公告)号：US20130009202A1

公开(公告)日：2013-01-10

申请号：US13538513

申请日：2012-06-29

申请人： Yohei ENYA ,  Yusuke YOSHIZUMI ,  Takashi KYONO ,  Takamichi SUMITOMO ,  Masaki UENO ,  Katsunori YANASHIMA ,  Kunihiko TASAI ,  Hiroshi NAKAJIMA

发明人： Yohei ENYA ,  Yusuke YOSHIZUMI ,  Takashi KYONO ,  Takamichi SUMITOMO ,  Masaki UENO ,  Katsunori YANASHIMA ,  Kunihiko TASAI ,  Hiroshi NAKAJIMA

IPC分类号： H01L33/32

CPC分类号： H01L33/14 ,  B82Y20/00 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/0421 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： A group-III nitride semiconductor device includes a light emitting layer emitting light of a wavelength in the range of 480 to 600 nm; a first contact layer over the light emitting layer; a second contact layer in direct contact with the first contact layer; and a metal electrode in direct contact with the second contact layer. The first and second contact layers comprise a p-type gallium nitride-based semiconductor. The p-type dopant concentration of the first contact layer is lower than that of the second contact layer. The light emitting layer comprises a gallium nitride-based semiconductor. The interface between the first and second contact layers tilts at an angle of not less than 50 degrees and smaller than 130 degrees from a plane orthogonal to a reference axis extending along the c-axis. The second contact layer has a thickness within the range of 1 to 50 nm.

摘要翻译： III族氮化物半导体器件包括发射波长在480至600nm范围内的光的发光层; 在所述发光层上的第一接触层; 与所述第一接触层直接接触的第二接触层; 以及与第二接触层直接接触的金属电极。 第一和第二接触层包括p型氮化镓基半导体。 第一接触层的p型掺杂剂浓度低于第二接触层的p型掺杂剂浓度。 发光层包括氮化镓基半导体。 第一和第二接触层之间的界面从与沿着c轴延伸的参考轴正交的平面以不小于50度且小于130度的角度倾斜。 第二接触层的厚度在1〜50nm的范围内。

公开(公告)号：US20120327967A1

公开(公告)日：2012-12-27

申请号：US13480178

申请日：2012-05-24

申请人： Yohei ENYA ,  Yusuke YOSHIZUMI ,  Takashi KYONO ,  Takamichi SUMITOMO ,  Masaki UENO ,  Katsunori YANASHIMA ,  Kunihiko TASAI ,  Hiroshi NAKAJIMA

发明人： Yohei ENYA ,  Yusuke YOSHIZUMI ,  Takashi KYONO ,  Takamichi SUMITOMO ,  Masaki UENO ,  Katsunori YANASHIMA ,  Kunihiko TASAI ,  Hiroshi NAKAJIMA

IPC分类号： H01S5/323 ,  H01L33/32

CPC分类号： H01S5/3201 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2301/176 ,  H01S2304/04

摘要： A nitride semiconductor laser device includes a p-type cladding layer, an active layer and an n-type cladding layer. The p-type cladding layer and the n-type cladding layer comprise indium and aluminum as group-III constituent. The n-type cladding layer, active layer and p-type cladding layer are arranged along the normal of a semi-polar semiconductor surface of a substrate. This surface tilts toward the m-axis of the hexagonal nitride by an angle of 63 degrees or more and smaller than 80 degrees from a plane orthogonal to a reference axis extending along the c-axis thereof. The active layer generates light having a peak wavelength in the range of 480 to 600 nm. The refractive indices of the n-type cladding layer and p-type cladding layer are smaller than that of GaN. The n-type cladding layer has a thickness of 2 μm or more while the p-type cladding layer has a thickness of 500 nm or more.

摘要翻译： 氮化物半导体激光器件包括p型覆层，有源层和n型覆层。 p型覆层和n型覆层包含铟和铝作为III族成分。 n型包覆层，有源层和p型覆层沿着基板的半极性半导体表面的法线配置。 该表面从垂直于沿其c轴延伸的基准轴的平面向六角形氮化物的m轴倾斜63度以上且小于80度的角度。 有源层产生峰值波长在480至600nm范围内的光。 n型包覆层和p型覆层的折射率小于GaN的折射率。 n型覆层的厚度为2μm以上，p型覆层的厚度为500nm以上。

公开(公告)号：US20120269222A1

公开(公告)日：2012-10-25

申请号：US13366636

申请日：2012-02-06

申请人： Takashi KYONO ,  Yohei ENYA ,  Takamichi SUMITOMO ,  Yusuke YOSHIZUMI ,  Masaki UENO ,  Katsunori YANASHIMA ,  Kunihiko TASAI ,  Hiroshi NAKAJIMA

发明人： Takashi KYONO ,  Yohei ENYA ,  Takamichi SUMITOMO ,  Yusuke YOSHIZUMI ,  Masaki UENO ,  Katsunori YANASHIMA ,  Kunihiko TASAI ,  Hiroshi NAKAJIMA

IPC分类号： H01S5/343

CPC分类号： H01S5/3201 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： A nitride semiconductor laser includes an electrically conductive support substrate with a primary surface of a gallium nitride based semiconductor, an active layer provided above the primary surface, and a p-type cladding region provided above the primary surface. The primary surface is inclined relative to a reference plane perpendicular to a reference axis extending in a direction of the c-axis of the gallium nitride based semiconductor. The p-type cladding region includes first and second p-type Group III nitride semiconductor layers. The first p-type semiconductor layer comprises an InAlGaN layer including built-in anisotropic strain. The second p-type semiconductor layer comprises semiconductor different from material of the InAlGaN layer. The first nitride semiconductor layer is provided between the second p-type semiconductor layer and the active layer. The second p-type semiconductor layer has a resistivity lower than that of the first p-type semiconductor layer.

摘要翻译： 氮化物半导体激光器包括具有氮化镓基半导体的主表面的导电支撑衬底，设置在主表面上方的有源层和设置在主表面上的p型覆层区域。 主表面相对于垂直于在氮化镓基半导体的c轴方向上延伸的参考轴的参考平面倾斜。 p型包层区域包括第一和第二p型III族氮化物半导体层。 第一p型半导体层包括包括内置各向异性应变的InAlGaN层。 第二p型半导体层包括与InAlGaN层的材料不同的半导体。 第一氮化物半导体层设置在第二p型半导体层和有源层之间。 第二p型半导体层的电阻率低于第一p型半导体层的电阻率。

公开(公告)号：US20130051417A1

公开(公告)日：2013-02-28

申请号：US13453743

申请日：2012-04-23

申请人： Takamichi SUMITOMO ,  Takashi KYONO ,  Masaki UENO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Masahiro ADACHI ,  Shimpei TAKAGI ,  Katsunori YANASHIMA

发明人： Takamichi SUMITOMO ,  Takashi KYONO ,  Masaki UENO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Masahiro ADACHI ,  Shimpei TAKAGI ,  Katsunori YANASHIMA

IPC分类号： H01S5/30

CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34333

摘要： A group III nitride semiconductor laser device includes a laser structure, an insulating layer, an electrode and dielectric multilayers. The laser structure includes a semiconductor region on a semi-polar primary surface of a hexagonal group III nitride semiconductor support base. The dielectric multilayers are on first and second end-faces for the laser cavity. The c-axis of the group III nitride tilts by an angle ALPHA from the normal axis of the primary surface in the waveguide axis direction from the first end-face to the second end-faces. A pad electrode has first to third portions provided on the first to third regions of the semiconductor regions, respectively. An ohmic electrode is in contact with the third region through an opening of the insulating layer. The first portion has a first arm, which extends to the first end-face edge. The third portion is away from the first end-face edge.

摘要翻译： III族氮化物半导体激光器件包括激光器结构，绝缘层，电极和电介质多层。 激光器结构包括在六方晶III族氮化物半导体支撑基体的半极性主表面上的半导体区域。 电介质多层在激光腔的第一和第二端面上。 III族氮化物的c轴从第一端面到第二端面在波导轴线方向上从主面的法线倾斜角度ALPHA。 焊盘电极具有分别设置在半导体区域的第一至第三区域上的第一至第三部分。 欧姆电极通过绝缘层的开口与第三区域接触。 第一部分具有延伸到第一端面边缘的第一臂。 第三部分远离第一端面边缘。

公开(公告)号：US20120269220A1

公开(公告)日：2012-10-25

申请号：US13354053

申请日：2012-01-19

申请人： Takashi KYONO ,  Shimpei TAKAGI ,  Takamichi SUMITOMO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Masaki UENO ,  Katsunori YANASHIMA

发明人： Takashi KYONO ,  Shimpei TAKAGI ,  Takamichi SUMITOMO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Masaki UENO ,  Katsunori YANASHIMA

IPC分类号： H01S5/323 ,  H01L33/02

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/2009 ,  H01S5/3202

摘要： A Group III nitride semiconductor laser device includes a laser structure including a support substrate with a semipolar primary surface of a hexagonal Group III nitride semiconductor, and a semiconductor region thereon, and an electrode, provided on the semiconductor region, extending in a direction of a waveguide axis in the laser device. The c-axis of the nitride semiconductor is inclined at an angle ALPHA relative to a normal axis to the semipolar surface toward the waveguide axis direction. The laser structure includes first and second fractured faces intersecting with the waveguide axis. A laser cavity of the laser device includes the first and second fractured faces extending from edges of first and second faces. The first fractured face includes a step provided at an end face of an InGaN layer of the semiconductor region and extending in a direction from one side face to the other of the laser device.

摘要翻译： III族氮化物半导体激光器件包括激光器结构，其包括具有六方晶III族氮化物半导体的半极性主表面的支撑衬底和其上的半导体区域，以及设置在半导体区域上的电极，沿着 波导轴在激光装置中。 氮化物半导体的c轴相对于朝向波导轴方向的半极性表面的法线轴线以一角度ALPHA倾斜。 激光器结构包括与波导轴相交的第一和第二断裂面。 激光装置的激光腔包括从第一和第二面的边缘延伸的第一和第二断裂面。 第一断裂面包括设置在半导体区域的InGaN层的端面并沿从激光器件的一个侧面到另一个的方向延伸的台阶。

公开(公告)号：US20120202304A1

公开(公告)日：2012-08-09

申请号：US13416844

申请日：2012-03-09

申请人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Shinji TOKUYAMA ,  Takamichi SUMITOMO ,  Masaki UENO ,  Takatoshi IKEGAMI ,  Koji KATAYAMA ,  Takao NAKAMURA

发明人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Shinji TOKUYAMA ,  Takamichi SUMITOMO ,  Masaki UENO ,  Takatoshi IKEGAMI ,  Koji KATAYAMA ,  Takao NAKAMURA

IPC分类号： H01L33/02

CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/34333

摘要： A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate with a semipolar primary surface, the semipolar primary surface including a hexagonal III-nitride semiconductor; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, the laser structure including a substrate and a semiconductor region, and the semiconductor region being formed on the semipolar primary surface; after forming the substrate product, forming first and second end faces; and forming first and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device on the first and second end faces, respectively.

摘要翻译： 一种制造III族氮化物半导体激光器件的方法包括：制备具有半极性主表面的衬底，所述半极性主表面包括六边形III族氮化物半导体; 形成具有激光结构的衬底产品，阳极电极和阴极电极，所述激光器结构包括衬底和半导体区域，并且所述半导体区域形成在所述半极性主表面上; 在形成基板产品之后，形成第一和第二端面; 以及分别在第一和第二端面上形成用于氮化物半导体激光器件的光腔的第一和第二电介质多层膜。

公开(公告)号：US20120114002A1

公开(公告)日：2012-05-10

申请号：US13294378

申请日：2011-11-11

申请人： Yohei ENYA ,  Yusuke YOSHIZUMI ,  Takashi KYONO ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Takao NAKAMURA

发明人： Yohei ENYA ,  Yusuke YOSHIZUMI ,  Takashi KYONO ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Takao NAKAMURA

IPC分类号： H01S5/32 ,  H01L33/02

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01S5/2009 ,  H01S5/34333

摘要： Provided is a Group III nitride semiconductor laser diode with a cladding layer capable of providing high optical confinement and carrier confinement. An n-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on a (20-21)-plane GaN substrate. A GaN optical guiding layer is grown so as to be lattice-relaxed on the n-type cladding layer. An active layer, a GaN optical guiding layer, an Al0.12Ga0.88N electron blocking layer, and a GaN optical guiding layer are grown so as not to be lattice-relaxed on the optical guiding layer. A p-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on the optical guiding layer. A p-type GaN contact layer is grown so as not to be lattice-relaxed on the p-type cladding layer, to produce a semiconductor laser. Dislocation densities at junctions are larger than those at the other junctions.

摘要翻译： 提供了具有能够提供高的光学限制和载流子限制的包层的III族氮化物半导体激光二极管。 生长n型Al0.08Ga0.92N包覆层，使其在（20-21）面GaN衬底上晶格弛豫。 在n型包覆层上生长GaN光引导层以使其晶格弛豫。 生长活性层，GaN光引导层，Al0.12Ga0.88N电子阻挡层和GaN光引导层，使得在导光层上不会格子弛豫。 生长p型Al0.08Ga0.92N覆层，使其在光导层上格子弛豫。 生长p型GaN接触层，以便在p型覆层上不会发生晶格弛豫，以产生半导体激光器。 交界处的位错密度大于其他路口的位错密度。

公开(公告)号：US20110210378A1

公开(公告)日：2011-09-01

申请号：US12846311

申请日：2010-07-29

申请人： Masaki UENO ,  Takashi KYONO ,  Yohei ENYA ,  Takamichi SUMITOMO ,  Yusuke YOSHIZUMI

发明人： Masaki UENO ,  Takashi KYONO ,  Yohei ENYA ,  Takamichi SUMITOMO ,  Yusuke YOSHIZUMI

IPC分类号： H01L29/778 ,  H01L29/205 ,  H01L21/338

CPC分类号： H01L29/7781 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7783

摘要： A high electron mobility transistor includes a free-standing supporting base having a III nitride region, a first III nitride barrier layer which is provided on the first III nitride barrier layer, a III nitride channel layer which is provided on the first III nitride barrier layer and forms a first heterojunction with the first III nitride barrier layer, a gate electrode provided on the III nitride channel layer so as to exert an electric field on the first heterojunction, a source electrode on the III nitride channel layer and the first III nitride barrier, and a drain electrode on the III nitride channel layer and the first III nitride barrier. The III nitride channel layer has compressive internal strain, and the piezoelectric field of the III nitride channel layer is oriented in the direction from the supporting base towards the first III nitride barrier layer. The first heterojunction extends along a plane having a normal axis that is inclined at an inclination angle in the range of 40 degrees to 85 degrees or 140 degrees to 180 degrees with respect to the c-axis of the III nitride region.

摘要翻译： 高电子迁移率晶体管包括具有III族氮化物区域的独立支撑基底，设置在第一III族氮化物阻挡层上的第一III族氮化物阻挡层，设置在第一III族氮化物阻挡层上的III族氮化物沟道层 并与第一III族氮化物阻挡层形成第一异质结，在III族氮化物沟道层上设置栅电极，以在第一异质结上施加电场，在III族氮化物沟道层上的源电极和第一III族氮化物阻挡层 ，以及在III族氮化物沟道层和第一III族氮化物屏障上的漏电极。 III族氮化物沟道层具有压缩内部应变，并且III族氮化物沟道层的压电场在从支撑基底朝向第一III族氮化物阻挡层的方向上取向。 第一异质结沿着具有相对于III族氮化物区域的c轴以40度至85度或140度至180度的范围内倾斜的倾斜角的平面延伸。

公开(公告)号：US20110180805A1

公开(公告)日：2011-07-28

申请号：US12836144

申请日：2010-07-14

申请人： Yohei ENYA ,  Yusuke YOSHIZUMI ,  Takashi KYONO ,  Takamichi SUMITOMO ,  Katsushi AKITA ,  Masaki UENO ,  Takao NAKAMURA

发明人： Yohei ENYA ,  Yusuke YOSHIZUMI ,  Takashi KYONO ,  Takamichi SUMITOMO ,  Katsushi AKITA ,  Masaki UENO ,  Takao NAKAMURA

IPC分类号： H01L33/32

CPC分类号： H01L21/02458 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2302/00

摘要： A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle ALPHA with respect to the c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes a plurality of GaN-based semiconductor layers. The reference axis is inclined at a first angle ALPHA1 in the range of not less than 10 degrees, and less than 80 degrees from the c-axis of the III-nitride semiconductor toward a first crystal axis, either one of the m-axis and a-axis. The reference axis is inclined at a second angle ALPHA2 in the range of not less than −0.30 degrees and not more than +0.30 degrees from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. The predetermined angle, the first angle, and the second angle have a relation of ALPHA=(ALPHA12+ALPHA22)1/2. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2.

摘要翻译： III族氮化物半导体器件具有由III族氮化物半导体构成的支撑基底，具有主要表面沿垂直于相对于III型氮化物半导体的c轴倾斜预定角度ALPHA的参考轴线的第一参考平面延伸， 氮化物半导体，以及设置在支撑基体的主表面上的外延半导体区域。 外延半导体区域包括多个GaN基半导体层。 基准轴在距离III族氮化物半导体的c轴朝向第一晶轴不小于10度且小于80度的范围内以第一角度ALPHA1倾斜，m轴和 a轴。 参考轴在距离III族氮化物半导体的c轴朝向第二晶轴不小于-0.30度且不大于+0.30度的范围内以第二角度ALPHA2倾斜，另一个m- 轴和a轴。 预定角度，第一角度和第二角度具有ALPHA =（ALPHA12 + ALPHA22）1/2的关系。 外延半导体区域的最外表面的形态包括多个凹坑。 坑的坑密度不大于5×104cm-2。

公开(公告)号：US20110057167A1

公开(公告)日：2011-03-10

申请号：US12947431

申请日：2010-11-16

申请人： Masaki UENO ,  Yohei ENYA ,  Takashi KYONO ,  Katsushi AKITA ,  Yusuke YOSHIZUMI ,  Takamichi SUMITOMO ,  Takao NAKAMURA

发明人： Masaki UENO ,  Yohei ENYA ,  Takashi KYONO ,  Katsushi AKITA ,  Yusuke YOSHIZUMI ,  Takamichi SUMITOMO ,  Takao NAKAMURA

IPC分类号： H01L33/04 ,  H01L33/26 ,  H01L33/32

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L33/18 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3407 ,  H01S2301/173 ,  H01S2304/04

摘要： In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The tilt angle α is in the range of greater than 59 degrees to less than 80 degrees or greater than 150 degrees to less than 180 degrees. A gallium nitride based semiconductor layer P is adjacent to a light-emitting layer SP− with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer W3 is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer P is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer SP− and the gallium nitride based semiconductor layer P.

摘要翻译： 在基于氮化物的半导体光学器件LE1中，应变阱层21沿着从与c轴方向延伸的参考轴正交的平面以倾斜角α倾斜的参考平面SR1延伸。 倾斜角α在大于59度至小于80度或大于150度至小于180度的范围内。 氮化镓基半导体层P与具有负的压电场的发光层SP相邻，并且具有比阻挡层的带隙大的带隙。 阱层W3中的压电场的方向指向从n型层到p型层的方向，并且氮化镓基半导体层P中的压电场指向从p型层的方向， 类型层到n型层。 因此，价带，而不是导带，在发光层SP-和氮化镓基半导体层P之间的界面处有下沉。