发明申请
US20120270053A1 SITU GROWN SiC COATINGS ON CARBON MATERIALS 有权
SITU GROWN碳化硅涂层在碳材料上

SITU GROWN SiC COATINGS ON CARBON MATERIALS
摘要:
A method of forming a β-SiC material or coating by mixing SiO2 with carbon and heating the mixture in vacuum wherein the carbon is oxidized to CO gas and reduces the SiO2 to SiO gas and reacting a carbon material with the SiO gas at a temperature in the range of 1300 to 1600° C. resulting in a SiC material or a SiC coating on a substrate. Also disclosed is the related SiC material or coating prepared by this method.
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