公开(公告)号：US10106423B2

公开(公告)日：2018-10-23

申请号：US15072724

申请日：2016-03-17

申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： Sang Whan Park ,  Mi Rae Youm ,  Sung Il Youn ,  Gyoung Sun Cho

IPC分类号： C01B21/06 ,  C01B31/36

摘要： The present invention relates to a method for preparing an ultrahigh-purity silicon carbide powder, more particularly to a method for preparing an ultrahigh-purity silicon carbide granular powder by preparing a gel wherein a silicon compound and a carbon compound are uniformly dispersed via a sol-gel process using a liquid state silicon compound and a solid or liquid state carbon compound of varying purities as raw materials, preparing a silicon dioxide-carbon (SiO2—C) composite by pyrolyzing the prepared gel, preparing a silicon carbide-silicon dioxide-carbon (SiC—SiO2—C) composite powder via two-step carbothermal reduction of the prepared silicon dioxide-carbon composite, adding a silicon metal and then conducting carbonization and carbothermal reduction at the same time by heat treating, thereby growing the synthesized silicon carbide particle with an increased yield of the silicon carbide.

公开(公告)号：US10059631B2

公开(公告)日：2018-08-28

申请号：US15386749

申请日：2016-12-21

申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

发明人： Ta-Ching Hsiao ,  Wen-Po Tu ,  Chu-Pi Jeng ,  Mu-Hsi Sung

IPC分类号： C04B35/573 ,  C04B35/628 ,  C04B35/626 ,  C01B31/36 ,  C30B23/00 ,  C30B29/36

CPC分类号： C04B35/573 ,  C01B32/956 ,  C04B35/6267 ,  C04B35/62675 ,  C04B35/6268 ,  C04B35/62839 ,  C04B35/62897 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/422 ,  C04B2235/424 ,  C04B2235/428 ,  C04B2235/441 ,  C04B2235/48 ,  C04B2235/5427 ,  C04B2235/5436 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/6584 ,  C30B23/00 ,  C30B29/36 ,  C30B35/007

摘要： A method for manufacturing micropowder is provided, which includes (a) mixing a silicon precursor and a carbon precursor to form a mixture, and heating and keeping the mixture at 1600° C. to 1800° C. under a vacuum and non-oxygen condition for 120 to 180 minutes to form a silicon carbide powder; and (b) heating and keeping the silicon carbide powder at 1900° C. to 2100° C. under non-oxygen condition for 5 to 15 minutes, and then cooling and keeping the silicon carbide powder at 1800° C. to 2000° C. under the non-oxygen condition for 5 to 15 minutes to form micropowder, wherein the micropowder includes a silicon carbide core covered by a carbon film.

公开(公告)号：US09919972B2

公开(公告)日：2018-03-20

申请号：US14864498

申请日：2015-09-24

申请人： MELIOR INNOVATIONS, INC.

发明人： Mark S. Land ,  Ashish P. Diwanji ,  Andrew R. Hopkins ,  Walter J. Sherwood ,  Douglas M. Dukes ,  Glenn Sandgren ,  Brian L. Benac

IPC分类号： C08L83/04 ,  C04B35/571 ,  C01B31/36 ,  C04B35/56 ,  C04B35/80 ,  C08G77/20 ,  C08G77/50 ,  C08G77/12 ,  C08G77/00

CPC分类号： C04B35/571 ,  C01B32/956 ,  C04B35/56 ,  C04B35/5603 ,  C04B35/806 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/44 ,  C04B2235/48 ,  C04B2235/483 ,  C04B2235/528 ,  C04B2235/5427 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6581 ,  C04B2235/72 ,  C04B2235/721 ,  C04B2235/727 ,  C04B2235/77 ,  C04B2235/785 ,  C04B2235/94 ,  C04B2235/96 ,  C08G77/12 ,  C08G77/20 ,  C08G77/50 ,  C08G77/80 ,  C08L83/00 ,  C08L83/04

摘要： Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

公开(公告)号：US09840420B2

公开(公告)日：2017-12-12

申请号：US14369049

申请日：2012-12-14

申请人： LG INNOTEK CO., LTD.

发明人： Jung Eun Han ,  Dong Geun Shin ,  Byung Sook Kim

IPC分类号： C04B35/571 ,  C01B31/36 ,  C01B31/18 ,  C04B35/645 ,  C04B35/575 ,  C04B35/626 ,  C04B35/634

CPC分类号： C01B32/956 ,  C01B32/40 ,  C04B35/571 ,  C04B35/575 ,  C04B35/62695 ,  C04B35/634 ,  C04B35/645 ,  C04B2235/48 ,  C04B2235/6582 ,  C04B2235/723 ,  C04B2235/77

摘要： A method for manufacturing a silicon carbide powder according to the embodiment includes forming a mixture by mixing a silicon (Si) source containing silicon with a solid carbon (C) source or a C source containing an organic carbon compound; heating the mixture; cooling the mixture; and supplying hydrogen gas into the mixture.

公开(公告)号：US20170081198A1

公开(公告)日：2017-03-23

申请号：US15123657

申请日：2015-02-12

申请人： Masahiro HOSHINO ,  TAIZHOU BEYOND TECHNOLOGY CO., LTD

发明人： Masahiro Hoshino ,  Lenian Zhang

IPC分类号： C01B31/36 ,  B01J19/08

CPC分类号： C01B31/36 ,  B01J19/088 ,  B01J2219/0869 ,  B01J2219/0883 ,  B01J2219/0884 ,  B01J2219/0886 ,  B01J2219/0888 ,  B01J2219/0894 ,  B01J2219/0898 ,  C01B32/956

摘要： Inside a furnace body with a vacuum environment or under the inert gas protection, the raw silicon material used to produce silicon carbide is melted or vaporized in a high temperature environment over 1300° C., and then the melted or vaporized raw silicon material will react with the carbonaceous gas or liquid to form silicon carbide. The present invention uses the carbonaceous gas with no metallic impurities, to replace petroleum coke, resin, asphalt, graphite, carbon fiber, coal, charcoal and some other carbon sources used in current production processes. When the carburizing reaction is in progress, the raw silicon material is melted or vaporized and the reaction takes place in the air. No container is required, so impurity contamination is lessened, and the produced silicon carbide has a fairly high purity.

公开(公告)号：US20170009374A1

公开(公告)日：2017-01-12

申请号：US15195071

申请日：2016-06-28

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Takayuki SHIRAI

IPC分类号： C30B19/10 ,  C30B19/04 ,  C30B19/12 ,  H01L29/167 ,  C01B31/36 ,  H01L29/16 ,  H01L29/04 ,  C30B19/06 ,  C30B29/36

CPC分类号： C30B19/106 ,  C01B32/956 ,  C30B19/04 ,  C30B19/062 ,  C30B19/12 ,  C30B29/36

摘要： A p-type SiC single crystal having lower resistivity than the prior art is provided. This is achieved by a method for producing a SiC single crystal in which a SiC seed crystal substrate is contacted with a Si—C solution having a temperature gradient such that the temperature decreases from the interior toward the surface, to grow a SiC single crystal, the method comprising: using as the Si—C solution a Si—C solution containing Si, Cr and Al, wherein the Al content is 3 at % or greater based on the total of Si, Cr and Al; and contacting a (0001) face of the SiC seed crystal substrate with the Si—C solution to grow a SiC single crystal from the (0001) face.

摘要翻译： 提供具有比现有技术更低的电阻率的p型SiC单晶。 这通过SiC单晶的制造方法来实现，其中SiC晶种基板与具有温度梯度的Si-C溶液接触，使得温度从内部朝向表面降低，生长SiC单晶， 所述方法包括：使用Si-Cr和Al的Si-C溶液作为Si-C溶液，其中Al含量基于Si，Cr和Al的总和为3at％或更大; 并使SiC晶种衬底的（0001）面与Si-C溶液接触，从（0001）面生长SiC单晶。

公开(公告)号：US20160236991A1

公开(公告)日：2016-08-18

申请号：US15141136

申请日：2016-04-28

申请人： Dale Adams

发明人： Dale Adams

IPC分类号： C04B35/645 ,  C04B40/00 ,  C04B35/624 ,  C01B31/36

CPC分类号： C04B35/645 ,  C04B35/575 ,  C04B35/5755 ,  C04B35/624 ,  C04B35/62605 ,  C04B35/634 ,  C04B35/638 ,  C04B35/64 ,  C04B38/00 ,  C04B40/0007 ,  C04B40/0021 ,  C04B2111/00793 ,  C04B2235/6023 ,  C04B2235/6028 ,  C04B2235/606 ,  C04B2235/6587 ,  C04B2235/66 ,  C04B2235/72 ,  C04B2235/94 ,  C04B35/565

摘要： A process for sintering silicon carbide is provided which includes the steps of providing a silicon carbide powder of silicon carbide granules; purifying the silicon carbide powder; subjecting the purified silicon carbide powder to a gel-casting process; removing the gel-cast part from the mold; drying the gel-cast part; obtaining a dried cast ceramic part (a green body) which is capable of green machining into a final desired shape; firing the green body in an oven at temperatures ranging from about 100° C. to about 1900° C. to remove or burn out any polymer remaining in the ceramic; and sintering the green body at temperatures ranging from about 1600° C. to less than about 2200° C.

摘要翻译： 提供烧结碳化硅的方法，其包括提供碳化硅颗粒的碳化硅粉末的步骤; 净化碳化硅粉末; 将纯化的碳化硅粉末进行凝胶浇铸工艺; 从模具中取出凝胶浇注部件; 干燥凝胶铸件; 获得能够进行绿色加工成最终所需形状的干燥铸造陶瓷部件（生坯） 在烘箱中在约100℃至约1900℃的温度下焙烧生坯，以除去或烧掉残留在陶瓷中的任何聚合物; 并在约1600℃至小于约2200℃的温度下烧结生坯。

公开(公告)号：US20160137513A1

公开(公告)日：2016-05-19

申请号：US14900800

申请日：2014-06-20

申请人： BRIDGESTONE CORPORATION

发明人： Kazuhito HASE

IPC分类号： C01B31/36

CPC分类号： C01B31/36 ,  C01B32/956 ,  C01P2004/61 ,  C04B35/575 ,  C04B2235/5436 ,  C04B2235/5463 ,  C04B2235/77

摘要： The present invention is a silicon carbide powder which is suitable for producing a high-strength silicon carbide sintered body, wherein: the molar ratio between carbon and silicon in a mixture containing a silicon source, a carbon source, and a catalyst is 2.5 or more; and the average particle diameter is 10 μm or more and 25 μm or less.

摘要翻译： 本发明是一种适用于制造高强度碳化硅烧结体的碳化硅粉末，其中：含有硅源，碳源和催化剂的混合物中的碳与硅的摩尔比为2.5以上 ; 平均粒径为10μm以上且25μm以下。

公开(公告)号：US20160118647A1

公开(公告)日：2016-04-28

申请号：US14523920

申请日：2014-10-26

申请人： Bindia Bhagat

发明人： Bindia Bhagat

IPC分类号： H01M4/36 ,  H01M4/58 ,  H01M4/66 ,  C01B31/36 ,  H01M4/587 ,  H01M4/62

CPC分类号： H01M4/364 ,  C01B32/956 ,  H01M4/58 ,  H01M4/587 ,  H01M4/62 ,  H01M4/666

摘要： 1. The specification relates to a carbonous composite particle made from pine tree needles or other natural leaves of composition CM for use in an energy cell. C is carbon, M is from a group of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Zr, Mo, Pd, Ag, W, Al, N, C, B, O, F, Si, P, Cl, Ga, Sn, Li, Na, K, Mg, Ca, Sr. Energy cell is lithium ion or sodium ion or lithium sulfur or lithium air or rechargeable cell or primary cell or electrochemical cell or fuel cell or magnesium cell or solar cell or capacitor or super-capacitor or hybrid cells or alkaline cell or lead acid cell or metal hydride or nickel cadmium or combination of thereof.

摘要翻译： 本说明书涉及用于能量池的松树针或组合物CM的其他天然叶片制成的碳质复合颗粒。 C为碳，M为Sc，Ti，V，Cr，Mn，Fe，Co，Ni，Cu，Zn，Zr，Mo，Pd，Ag，W，Al，N，C，B， F，Si，P，Cl，Ga，Sn，Li，Na，K，Mg，Ca，Sr。能量电池是锂离子或钠离子或锂硫或锂空气或可再充电电池或原电池或电化学电池或燃料电池 或镁电池或太阳能电池或电容器或超级电容器或混合电池或碱性电池或铅酸电池或金属氢化物或镍镉或其组合。

公开(公告)号：US09272913B2

公开(公告)日：2016-03-01

申请号：US14570927

申请日：2014-12-15

申请人： ADVANCED CERAMIC FIBERS, LLC

发明人： John E. Garnier ,  George W. Griffith

IPC分类号： C01B31/06 ,  C01B31/36

CPC分类号： C01B31/36 ,  B82Y30/00 ,  C01B32/956 ,  C04B35/565 ,  C04B35/571 ,  C04B35/573 ,  C04B35/62281 ,  C04B35/806 ,  C04B2235/428 ,  C04B2235/46 ,  C04B2235/48 ,  C04B2235/5244 ,  C04B2235/5248 ,  C04B2235/526 ,  C04B2235/5264 ,  C04B2235/5284 ,  C04B2235/5445 ,  C04B2235/616 ,  C04B2235/72 ,  C04B2235/767 ,  Y10T428/249924 ,  Y10T428/249928 ,  Y10T428/24993 ,  Y10T428/249974 ,  Y10T428/2918 ,  Y10T428/292 ,  Y10T428/2933 ,  Y10T428/2958 ,  Y10T428/2964 ,  Y10T428/2967 ,  Y10T428/2975

摘要： Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500° C. to approximately 2000° C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01×102 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

摘要翻译： 生产碳化硅纤维的方法。 该方法包括使反应室中的连续碳纤维材料和含硅气体在约1500℃至约2000℃的温度下反应。反应室中氧的分压保持在小于约 1.01×102帕斯卡，以生产连续的α碳化硅纤维。 还公开了连续的α碳化硅纤维和由连续的α碳化硅纤维形成的制品。