发明申请
- 专利标题: LIGHT EMITTING DIODE
- 专利标题(中): 发光二极管
-
申请号: US13288187申请日: 2011-11-03
-
公开(公告)号: US20120273754A1公开(公告)日: 2012-11-01
- 发明人: YANG WEI , SHOU-SHAN FAN
- 申请人: YANG WEI , SHOU-SHAN FAN
- 申请人地址: TW Tu-Cheng CN Beijing
- 专利权人: HON HAI PRECISION INDUSTRY CO., LTD.,TSINGHUA UNIVERSITY
- 当前专利权人: HON HAI PRECISION INDUSTRY CO., LTD.,TSINGHUA UNIVERSITY
- 当前专利权人地址: TW Tu-Cheng CN Beijing
- 优先权: CN201110110778.4 20110429
- 主分类号: H01L33/06
- IPC分类号: H01L33/06 ; B82Y20/00
摘要:
A light emitting diode includes a second electrode, a first semiconductor layer, an active layer, a second semiconductor layer, a reflector, and a first electrode. The second electrode, the first semiconductor layer, the active layer, the second semiconductor layer, and the reflector are stacked on the first electrode in that order. The first semiconductor layer defines a plurality of grooves on a surface contacting the second electrode. The plurality of grooves form a patterned surface used as the light extraction surface. A carbon nanotube layer is located on the patterned surface and embedded into the grooves.
公开/授权文献
- US08633467B2 Light emitting diode 公开/授权日:2014-01-21
信息查询
IPC分类: