Invention Application
US20120273796A1 HIGH INDIUM UPTAKE AND HIGH POLARIZATION RATIO FOR GROUP-III NITRIDE OPTOELECTRONIC DEVICES FABRICATED ON A SEMIPOLAR (20-2-1) PLANE OF A GALLIUM NITRIDE SUBSTRATE
审中-公开
用于氮化镓衬底的二极体（20-2-1）平面上制备的III族氮化物光电子器件的高吸收率和高极化比
- Patent Title: HIGH INDIUM UPTAKE AND HIGH POLARIZATION RATIO FOR GROUP-III NITRIDE OPTOELECTRONIC DEVICES FABRICATED ON A SEMIPOLAR (20-2-1) PLANE OF A GALLIUM NITRIDE SUBSTRATE
- Patent Title (中): 用于氮化镓衬底的二极体（20-2-1）平面上制备的III族氮化物光电子器件的高吸收率和高极化比
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Application No.: US13459963Application Date: 2012-04-30
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Publication No.: US20120273796A1Publication Date: 2012-11-01
- Inventor: Yuji Zhao , Shinichi Tanaka , Chia-Yen Huang , Daniel F. Feezell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- Applicant: Yuji Zhao , Shinichi Tanaka , Chia-Yen Huang , Daniel F. Feezell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- Applicant Address: US CA Oakland
- Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee Address: US CA Oakland
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A Group-III nitride optoelectronic device fabricated on a semipolar (20-2-1) plane of a Gallium Nitride (GaN) substrate is characterized by a high Indium uptake and a high polarization ratio.
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