发明申请
- 专利标题: LIGHT EMITTING DIODE CHIP AND METHOD OF MANUFACTURING THE SAME
- 专利标题(中): 发光二极管芯片及其制造方法
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申请号: US13397688申请日: 2012-02-16
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公开(公告)号: US20120273830A1公开(公告)日: 2012-11-01
- 发明人: CHIA-HUNG HUANG , SHIH-CHENG HUANG , PO-MIN TU , SHUN-KUEI YANG
- 申请人: CHIA-HUNG HUANG , SHIH-CHENG HUANG , PO-MIN TU , SHUN-KUEI YANG
- 申请人地址: TW Hsinchu Hsien
- 专利权人: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- 当前专利权人: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- 当前专利权人地址: TW Hsinchu Hsien
- 优先权: CN201110108528.7 20110428
- 主分类号: H01L33/36
- IPC分类号: H01L33/36
摘要:
An LED chip includes a substrate, a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a first electrode and a second electrode formed on the substrate in sequence. A surface of the first type semiconductor layer away from the substrate comprises an exposed first area and a second area covered by the light-emitting layer. The first electrode is formed on the exposed first area of the substrate. A number of recesses are defined in the second area of the surface of the first type semiconductor layer. The recesses are spaced apart from each other and arranged in sequence in a direction away from the first electrode; depths of the recesses gradually decrease following an increase of a distance between the recesses and the first electrode. The second electrode is formed on the second type semiconductor layer.
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