公开(公告)号：US20120100656A1

公开(公告)日：2012-04-26

申请号：US13172840

申请日：2011-06-30

申请人： SHIH-CHENG HUANG ,  PO-MIN TU ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

发明人： SHIH-CHENG HUANG ,  PO-MIN TU ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

IPC分类号： H01L33/18

CPC分类号： C30B29/406 ,  C30B25/183

摘要： A method for making a solid state semiconductor device includes: providing a substrate; forming a buffer layer on the substrate; forming a first epitaxial layer on the buffer layer; forming a surface-textured second epitaxial layer on the first epitaxial layer by chemical vapor deposition; and forming a solid state stacked layer structure having a PN-junction type light-emitting part on a textured surface of the second epitaxial layer.

摘要翻译： 制造固态半导体器件的方法包括：提供衬底; 在衬底上形成缓冲层; 在所述缓冲层上形成第一外延层; 通过化学气相沉积在所述第一外延层上形成表面纹理的第二外延层; 以及在所述第二外延层的纹理表面上形成具有PN结型发光部分的固态堆叠层结构。

公开(公告)号：US20120086032A1

公开(公告)日：2012-04-12

申请号：US13171472

申请日：2011-06-29

申请人： SHIH-CHENG HUANG ,  PO-MIN TU ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

发明人： SHIH-CHENG HUANG ,  PO-MIN TU ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

IPC分类号： H01L33/60

CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/12 ,  H01L33/382 ,  H01L33/46

摘要： A semiconductor light-emitting structure includes a silicon substrate, a distributed Bragg reflector, a semiconductor structures layer and an epitaxy connecting layer. The silicon substrate has a top surface. The distributed Bragg reflector is formed on the top surface of the silicon substrate. The semiconductor structures layer is configured for emitting light. The epitaxy connecting layer is placed between the distributed Bragg reflector and the semiconductor structures layer. Grooves extend from the semiconductor structures layer through the epitaxy connecting layer and the distributed Bragg reflector to reach the semiconductor structures layer.

摘要翻译： 半导体发光结构包括硅衬底，分布式布拉格反射器，半导体结构层和外延连接层。 硅衬底具有顶表面。 分布式布拉格反射器形成在硅衬底的顶表面上。 半导体结构层被配置为发光。 外延连接层放置在分布式布拉格反射器和半导体结构层之间。 沟槽从半导体结构层延伸穿过外延连接层和分布式布拉格反射器到达半导体结构层。

公开(公告)号：US20120100648A1

公开(公告)日：2012-04-26

申请号：US13216244

申请日：2011-08-24

申请人： SHIH-CHENG HUANG ,  PO-MIN TU ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

发明人： SHIH-CHENG HUANG ,  PO-MIN TU ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

IPC分类号： H01L33/60

CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/46

摘要： A method for manufacturing light emitting chips includes steps of: providing a substrate having a plurality of separate epitaxy islands thereon, wherein the epitaxy islands are spaced from each other by channels; filling the channels with an insulation material; sequentially forming a reflective layer, a transition layer and a base on the insulation material and the epitaxy islands; removing the substrate and the insulation material to expose the channels; and cutting the reflective layer, the transition layer and the base to form a plurality of individual chips along the channels.

摘要翻译： 制造发光芯片的方法包括以下步骤：提供其上具有多个分离的外延岛的衬底，其中所述外延岛通过沟道彼此间隔开; 用绝缘材料填充通道; 在绝缘材料和外延岛上依次形成反射层，过渡层和基底; 去除衬底和绝缘材料以暴露通道; 并且切割反射层，过渡层和基底，以沿通道形成多个独立的芯片。

公开(公告)号：US20120097976A1

公开(公告)日：2012-04-26

申请号：US13214254

申请日：2011-08-22

申请人： PO-MIN TU ,  SHIH-CHENG HUANG ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

发明人： PO-MIN TU ,  SHIH-CHENG HUANG ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

IPC分类号： H01L33/02 ,  H01L33/60

CPC分类号： H01L33/0079 ,  H01L33/20 ,  H01L33/405

摘要： A light emitting diode chip includes an electrically conductive substrate, a reflecting layer disposed on the substrate, a semiconductor structure formed on the reflecting layer, an electrode disposed on the semiconductor structure, and a plurality of slots extending through the semiconductor structure. The semiconductor structure includes a P-type semiconductor layer formed on the reflecting layer, a light-emitting layer formed on the P-type semiconductor layer, and an N-type semiconductor layer formed on the light-emitting layer. A current diffusing region is defined in the semiconductor structure and around the electrode. The slots are located outside the current diffusing region.

摘要翻译： 发光二极管芯片包括导电基板，设置在基板上的反射层，形成在反射层上的半导体结构，设置在半导体结构上的电极和延伸穿过半导体结构的多个狭缝。 半导体结构包括形成在反射层上的P型半导体层，形成在P型半导体层上的发光层和形成在发光层上的N型半导体层。 在半导体结构中和电极周围限定电流扩散区。 槽位于电流扩散区域外部。

公开(公告)号：US20120018847A1

公开(公告)日：2012-01-26

申请号：US13013825

申请日：2011-01-26

申请人： PO-MIN TU ,  SHIH-CHENG HUANG ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

发明人： PO-MIN TU ,  SHIH-CHENG HUANG ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

IPC分类号： H01L29/20 ,  H01L21/20 ,  H01L29/06

CPC分类号： H01L29/2003 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/16

摘要： A gallium nitride-based semiconductor device includes a composite substrate and a gallium nitride layer. The composite substrate includes a silicon substrate and a filler. The silicon substrate includes a first surface and a second surface opposite to the first surface, and the first surface defines a number of grooves therein. The filler is filled into the number of grooves on the first surface of the silicon substrate. A thermal expansion coefficient of the filler is bigger than that of the silicon substrate. The gallium nitride layer is formed on the second surface of the silicon substrate.

摘要翻译： 氮化镓系半导体器件包括复合衬底和氮化镓层。 复合衬底包括硅衬底和填料。 硅衬底包括第一表面和与第一表面相对的第二表面，并且第一表面在其中限定多个凹槽。 将填料填充到硅衬底的第一表面上的槽数中。 填料的热膨胀系数大于硅衬底的热膨胀系数。 氮化镓层形成在硅衬底的第二表面上。

公开(公告)号：US20130234150A1

公开(公告)日：2013-09-12

申请号：US13600137

申请日：2012-08-30

申请人： CHIA-HUNG HUANG ,  SHIH-CHENG HUANG ,  PO-MIN TU ,  YA-WEN LIN ,  SHUN-KUEI YANG

发明人： CHIA-HUNG HUANG ,  SHIH-CHENG HUANG ,  PO-MIN TU ,  YA-WEN LIN ,  SHUN-KUEI YANG

IPC分类号： H01L33/22 ,  H01L33/58

CPC分类号： H01L33/58 ,  H01L33/10 ,  H01L33/22 ,  H01L33/32

摘要： A light emitting diode includes a substrate, a transitional layer on the substrate and an epitaxial layer on the transitional layer. The transitional layer includes a planar area with a flat top surface and a patterned area with a rugged top surface. An AlN material includes a first part consisting of a plurality of spheres and a second part consisting of a plurality of slugs. The spheres are on a top surface of the transitional layer, both at the planar area and the patterned area. The slugs are in grooves defined in the patterned area. Air gaps are formed between the slugs and a bottom surface of the epitaxial layer. The spheres and slugs of the AlN material help reflection of light generated by the epitaxial layer to a light output surface of the LED.

摘要翻译： 发光二极管包括衬底，衬底上的过渡层和过渡层上的外延层。 过渡层包括具有平坦顶表面的平坦区域和具有粗糙顶表面的图案区域。 AlN材料包括由多个球体组成的第一部分和由多个球团组成的第二部分。 球体在平坦区域和图案化区域处于过渡层的顶表面上。 s条位于图案区域中限定的凹槽中。 在s条和外延层的底表面之间形成气隙。 AlN材料的球体和块状物有助于将由外延层产生的光反射到LED的光输出表面。

公开(公告)号：US20130001508A1

公开(公告)日：2013-01-03

申请号：US13400097

申请日：2012-02-19

申请人： YA-WEN LIN ,  SHIH-CHENG HUANG ,  PO-MIN TU ,  CHIA-HUNG HUANG ,  SHUN-KUEI YANG

发明人： YA-WEN LIN ,  SHIH-CHENG HUANG ,  PO-MIN TU ,  CHIA-HUNG HUANG ,  SHUN-KUEI YANG

IPC分类号： H01L33/14 ,  H01L33/32

CPC分类号： H01L33/20 ,  H01L33/0075 ,  H01L33/145 ,  H01L33/38 ,  H01L33/382

摘要： An LED comprises a substrate, a buffer layer, an epitaxial layer and a conductive layer. The epitaxial layer comprises a first N-type epitaxial layer, a second N-type epitaxial layer, and a blocking layer with patterned grooves sandwiched between the first and second N-type epitaxial layers. The first and second N-type epitaxial layers make contact each other via the patterned grooves. Therefore, the LED enjoys a uniform current distribution and a larger light emitting area. A manufacturing method for the LED is also provided.

摘要翻译： LED包括衬底，缓冲层，外延层和导电层。 外延层包括第一N型外延层，第二N型外延层和夹在第一和第二N型外延层之间的图案化沟槽的阻挡层。 第一和第二N型外延层经由图案化的沟槽彼此接触。 因此，LED具有均匀的电流分布和更大的发光面积。 还提供了一种用于LED的制造方法。

公开(公告)号：US20120074531A1

公开(公告)日：2012-03-29

申请号：US13151254

申请日：2011-06-01

申请人： PO-MIN TU ,  SHIH-CHENG HUANG ,  CHIA-HUNG HUANG ,  SHUN-KUEI YANG

发明人： PO-MIN TU ,  SHIH-CHENG HUANG ,  CHIA-HUNG HUANG ,  SHUN-KUEI YANG

IPC分类号： H01L29/02

CPC分类号： H01L27/153 ,  H01L33/007 ,  H01L33/20

摘要： An epitaxy substrate for growing a plurality of semiconductor epitaxial layers thereon, includes a plurality of growth areas and a plurality of protected areas. The growth areas are provided for growing the semiconductor epitaxial layers thereon. The growth areas and the protected areas are alternating. A thickness of the growth areas is less than ⅓ of a thickness H of the protected areas.

摘要翻译： 用于在其上生长多个半导体外延层的外延衬底包括多个生长区域和多个保护区域。 提供生长区域用于在其上生长半导体外延层。 增长区和保护区是交替的。 生长区的厚度小于保护区的厚度H的1/3。

公开(公告)号：US20120273830A1

公开(公告)日：2012-11-01

申请号：US13397688

申请日：2012-02-16

申请人： CHIA-HUNG HUANG ,  SHIH-CHENG HUANG ,  PO-MIN TU ,  SHUN-KUEI YANG

发明人： CHIA-HUNG HUANG ,  SHIH-CHENG HUANG ,  PO-MIN TU ,  SHUN-KUEI YANG

IPC分类号： H01L33/36

CPC分类号： H01L33/38 ,  H01L33/14 ,  H01L33/20 ,  H01L33/42 ,  H01L2933/0016

摘要： An LED chip includes a substrate, a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a first electrode and a second electrode formed on the substrate in sequence. A surface of the first type semiconductor layer away from the substrate comprises an exposed first area and a second area covered by the light-emitting layer. The first electrode is formed on the exposed first area of the substrate. A number of recesses are defined in the second area of the surface of the first type semiconductor layer. The recesses are spaced apart from each other and arranged in sequence in a direction away from the first electrode; depths of the recesses gradually decrease following an increase of a distance between the recesses and the first electrode. The second electrode is formed on the second type semiconductor layer.

摘要翻译： LED芯片依次包括基板，第一类型半导体层，发光层，第二类型半导体层，第一电极和第二电极。 离开衬底的第一类型半导体层的表面包括暴露的第一区域和被发光层覆盖的第二区域。 第一电极形成在基板的暴露的第一区域上。 在第一类型半导体层的表面的第二区域中限定多个凹部。 凹部彼此间隔开并且沿远离第一电极的方向依次布置; 随着凹部和第一电极之间的距离的增加，凹部的深度逐渐减小。 第二电极形成在第二类型半导体层上。

公开(公告)号：US20120164764A1

公开(公告)日：2012-06-28

申请号：US13216248

申请日：2011-08-24

申请人： PO-MIN TU ,  SHIH-CHENG HUANG ,  YA-WEN LIN ,  CHIA-HUNG HUANG ,  SHUN-KUEI YANG

发明人： PO-MIN TU ,  SHIH-CHENG HUANG ,  YA-WEN LIN ,  CHIA-HUNG HUANG ,  SHUN-KUEI YANG

IPC分类号： H01L33/62

CPC分类号： H01L33/24 ,  H01L33/005

摘要： A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate with a first block layer dividing an upper surface of the substrate into a plurality of epitaxial regions; forming a first semiconductor layer on the epitaxial regions; forming a second block layer partly covering the first semiconductor layer; forming a lighting structure on an uncovered portion of the first semiconductor layer; removing the first and the second block layers thereby defining clearances at the bottom surfaces of the first semiconductor layer and the lighting structure; and permeating etching solution into the first and second clearances to etch the first semiconductor layer and the lighting structure, thereby to form each of the first semiconductor layer and the lighting structure with an inverted frustum-shaped structure.

摘要翻译： 一种制造半导体照明芯片的方法包括以下步骤：向衬底提供将衬底的上表面分成多个外延区域的第一块层; 在所述外延区上形成第一半导体层; 形成部分地覆盖所述第一半导体层的第二块层; 在所述第一半导体层的未覆盖部分上形成照明结构; 去除第一和第二块层，从而在第一半导体层和照明结构的底表面处限定间隙; 并将渗透的蚀刻溶液浸入第一和第二间隙中以蚀刻第一半导体层和照明结构，由此形成具有倒立的截头锥形结构的第一半导体层和照明结构中的每一个。