An integrated circuit structure including a copper-aluminum interconnect with a barrier layer including a titanium nitride layer and a method for fabricating the same are disclosed. The method for fabricating an integrated circuit structure including a copper-aluminum interconnect according to the present invention comprises the steps of providing a copper (Cu) layer; forming a barrier layer connected to the copper layer, wherein the barrier layer comprises a first layer including a tantalum layer and a tantalum nitride layer and a second layer including a titanium nitride layer, the first layer contacts the copper layer and is disposed between the copper layer and the second layer, and the barrier layer has a recess correspondingly above the copper layer; and forming an aluminum (Al) layer disposed in the recess.