发明申请
US20120276301A1 ADHESION IMPROVEMENT OF DIELECTRIC BARRIER TO COPPER BY THE ADDITION OF THIN INTERFACE LAYER
审中-公开
电介质阻挡层通过添加薄界面对铜的粘接改进
- 专利标题： ADHESION IMPROVEMENT OF DIELECTRIC BARRIER TO COPPER BY THE ADDITION OF THIN INTERFACE LAYER
- 专利标题（中）： 电介质阻挡层通过添加薄界面对铜的粘接改进
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申请号： US13545738申请日： 2012-07-10
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公开(公告)号： US20120276301A1公开(公告)日： 2012-11-01
- 发明人: Yong-Won Lee , Sang M. Lee , Meiyee (Maggie Le) Shek , Weifeng Ye , Li-Qun Xia , Derek R. Witty , Thomas Nowak , Juan Carlos Rocha-Alvarez , Jigang Li
- 申请人： Yong-Won Lee , Sang M. Lee , Meiyee (Maggie Le) Shek , Weifeng Ye , Li-Qun Xia , Derek R. Witty , Thomas Nowak , Juan Carlos Rocha-Alvarez , Jigang Li
- 主分类号： B05D5/12
- IPC分类号： B05D5/12 ; B05D3/06
摘要：
Embodiments described herein provide a method of processing a substrate. The method includes depositing an interface adhesion layer between a conductive material and a dielectric material such that the interface adhesion layer provides increased adhesion between the conductive material and the dielectric material. In one embodiment a method for processing a substrate is provided. The method comprises depositing an interface adhesion layer on a substrate comprising a conductive material, exposing the interface adhesion layer to a nitrogen containing plasma, and depositing a dielectric layer on the interface adhesion layer after exposing the interface adhesion layer to the nitrogen containing plasma.
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