发明申请
- 专利标题: METHOD OF PATTERNING OF MAGNETIC TUNNEL JUNCTIONS
- 专利标题(中): 电磁隧道结构的方法
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申请号: US13095736申请日: 2011-04-27
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公开(公告)号: US20120276657A1公开(公告)日: 2012-11-01
- 发明人: Olivier Joubert , Benjamin Schwarz , Jérémy Gilbert Maurice Pereira , Kevin Menguelti , Erwine Maude Pargon , Maxime Darnon
- 申请人: Olivier Joubert , Benjamin Schwarz , Jérémy Gilbert Maurice Pereira , Kevin Menguelti , Erwine Maude Pargon , Maxime Darnon
- 主分类号: H01L21/8246
- IPC分类号: H01L21/8246
摘要:
Embodiments of the invention generally relate to methods for fabricating devices on semiconductor substrates. More specifically, embodiments of the invention relate to methods of patterning magnetic materials. Certain embodiments described herein use a reducing chemistry containing a hydrogen gas or hydrogen containing gas with an optional dilution gas at temperatures ranging from 20 to 300 degrees Celsius at a substrate bias less than 1,000 DC voltage to reduce the amount of sputtering and redeposition. Exemplary hydrogen containing gases which may be used with the embodiments described herein include NH3, H2, CH4, C2H4, SiH4, and H2S. It has been found that patterning a magnetic tunnel junction with an oxidizer-free gas mixture comprising hydrogen maintains the integrity of the magnetic tunnel junction without producing harmful conductive residue.
公开/授权文献
- US08546263B2 Method of patterning of magnetic tunnel junctions 公开/授权日:2013-10-01